Alcatel-Lucent

About: Alcatel-Lucent is a based out in Stuttgart, Germany. It is known for research contribution in the topics: Signal & Network packet. The organization has 37003 authors who have published 53332 publications receiving 1430547 citations. The organization is also known as: Alcatel-Lucent S.A. & Alcatel.

Direct link between microwave and optical frequencies with a 300 THz femtosecond laser comb

Abstract: We demonstrate a great simplification in the long-standing problem of measuring optical frequencies in terms of the cesium primary standard. An air-silica microstructure optical fiber broadens the frequency comb of a femtosecond laser to span the optical octave from 1064 to 532 nm, enabling us to measure the 282 THz frequency of an iodine-stabilized Nd:YAG laser directly in terms of the microwave frequency that controls the comb spacing. Additional measurements of established optical frequencies at 633 and 778 nm using the same femtosecond comb confirm the accepted uncertainties for these standards.

NMR chemical shift imaging in three dimensions

Abstract: A method for obtaining the three-dimensional distribution of chemical shifts in a spatially inhomogeneous sample using Fourier transform NMR is presented. The method uses a sequence of pulsed field gradients to measure the Fourier transform of the desired distribution on a rectangular grid in (k,t) space. Simple Fourier inversion then recovers the original distribution. An estimated signal/noise ratio of 20 in 10 min is obtained for an "image" of the distribution of a 10 mM phosphorylated metabolite in the human head at a field of 20 kG with 2-cm resolution.

Bose-Einstein Condensation of Microcavity Polaritons in a Trap

Abstract: We have created polaritons in a harmonic potential trap analogous to atoms in optical traps. The trap can be loaded by creating polaritons 50 micrometers from its center that are allowed to drift into the trap. When the density of polaritons exceeds a critical threshold, we observe a number of signatures of Bose-Einstein condensation: spectral and spatial narrowing, a peak at zero momentum in the momentum distribution, first-order coherence, and spontaneous linear polarization of the light emission. The polaritons, which are eigenstates of the light-matter system in a microcavity, remain in the strong coupling regime while going through this dynamical phase transition.

The electronic structure at the atomic scale of ultrathin gate oxides

Abstract: The narrowest feature on present-day integrated circuits is the gate oxide—the thin dielectric layer that forms the basis of field-effect device structures. Silicon dioxide is the dielectric of choice and, if present miniaturization trends continue, the projected oxide thickness by 2012 will be less than one nanometre, or about five silicon atoms across1. At least two of those five atoms will be at the silicon–oxide interfaces, and so will have very different electrical and optical properties from the desired bulk oxide, while constituting a significant fraction of the dielectric layer. Here we use electron-energy-loss spectroscopy in a scanning transmission electron microscope to measure the chemical composition and electronic structure, at the atomic scale, across gate oxides as thin as one nanometre. We are able to resolve the interfacial states that result from the spillover of the silicon conduction-band wavefunctions into the oxide. The spatial extent of these states places a fundamental limit of 0.7 nm (four silicon atoms across) on the thinnest usable silicon dioxide gate dielectric. And for present-day oxide growth techniques, interface roughness will raise this limit to 1.2 nm.