Alcatel-Lucent

About: Alcatel-Lucent is a based out in Stuttgart, Germany. It is known for research contribution in the topics: Signal & Network packet. The organization has 37003 authors who have published 53332 publications receiving 1430547 citations. The organization is also known as: Alcatel-Lucent S.A. & Alcatel.

Two phase local mobility scheme for wireless access to packet based networks

Abstract: Local mobility within a subnet is supported by classifying wireless base stations, and the routers used to forward packets to those base stations, within defined domains. Domains are defined to incorporate a subnet having a plurality of base stations. Base stations are used by mobile devices to attach to the wired portion of a packet-based network, such as the Internet, and exchange packets thereover with a correspondent node. Packets sent from the correspondent node to the mobile device have a packet destination address corresponding to the mobile device. The mobile device retains this address for the duration of time it is powered up and attached to the Internet via any base station within a given domain. Host-based routing is utilized to update routing table entries corresponding to the mobile device at routers incorporated within a single domain. The routing table entries are established and updated via path setup schemes to convey packets destined for the mobile device along the proper established path through the domain routers and base stations, regardless of the domain base station through which the mobile device is attached. Path setup schemes utilize power up, refresh, and handoff path setup messages to maintain the proper relationship between router interfaces and packet addresses for routing table entries.

Growth and characterization of ultrathin nitrided silicon oxide films

Abstract: This paper reviews recent progress in understanding microstructural and growth-mechanistic aspects of ultrathin (<4 nm) oxynitride films for gate dielectric applications. Different techniques for characterizing these films are summarized. We discuss several nitridation methods, including thermal (oxy)nitridation in NO, N2O, and N2 as well as a variety of deposition methods. We show that a basic understanding of the gas-phase and thin-film oxygen and nitrogen incorporation chemistries facilitates the processing of layered oxynitride nanostructures with desirable electrical properties.

Context-sensitive presentation of information to call-center agents

Abstract: A method (200-520) and an apparatus (118) for presenting information to a call center agent in a context-sensitive manner involves monitoring (314, 504) activities--such as keyboard or pointer input from an agent and information being displayed to the agent--at an agent position (140, 150) of a call center, receiving (318, 508) a request for information--such as directory information or a list of wrapup codes--from the agent, in response analyzing (322, 324, 512) the request within the context of the monitored activities to determine a subset of the requested information--such as selected telephone numbers or a selected wrapup code--which is most relevant to the monitored activities, and then either presenting (404, 408)--displaying--only the subset to the agent in response to the request, or presenting (410, 514) the requested information in a manner that emphasizes the subset over the rest of the requested information--such as by highlighting the subset. Preferably, the monitoring also includes monitoring (202) with whom the agent is presently engaged in a telephone call and what the telephone call is about, and the analyzing also includes analyzing (208, 304) the monitored activities to determine whether non-requested information is relevant to the monitored activities or what actions should be undertaken with respect to the call, and then giving an indication (216, 312) of the determination to the agent.

Surface morphology of related GexSi1−x films

Abstract: We have investigated the surface morphology of relaxed, compositionally graded GexSi1−x structures, to illustrate the influence of defect‐related strain fields on film growth. Quantitative topographic measurements via scanning force microscopy show that the roughness associated with the cross‐hatch patterns, due to underlying misfit dislocations beneath the surface, increases as the final Ge concentration or the grading rate increases. We further show that strain fields arising from the termination of threading dislocations at the surface result in shallow depressions.

Interface structure between silicon and its oxide by first-principles molecular dynamics

Abstract: The requirement for increasingly thin (<50 A) insulating oxide layers in silicon-based electronic devices highlights the importance of characterizing the Si–SiO2 interface structure at the atomic scale. Such a characterization relies to a large extent on an understanding of the atomic-scale mechanisms that govern the oxidation process. The widely used Deal–Grove model invokes a two-step process in which oxygen first diffuses through the amorphous oxide network before attacking the silicon substrate, resulting in the formation of new oxide at the buried interface1. But it remains unclear how such a process can yield the observed near-perfect interface2,3,4,5,6,7,8,9,10,11,12. Here we use first-principles molecular dynamics13,14,15 to generate a model interface structure by simulating the oxidation of three silicon layers. The resulting structure reveals an unexpected excess of silicon atoms at the interface, yet shows no bonding defects. Changes in the bonding network near the interface occur during the simulation via transient exchange events wherein oxygen atoms are momentarily bonded to three silicon atoms — this mechanism enables the interface to evolve without leaving dangling bonds.