Alcatel-Lucent

About: Alcatel-Lucent is a based out in Stuttgart, Germany. It is known for research contribution in the topics: Signal & Network packet. The organization has 37003 authors who have published 53332 publications receiving 1430547 citations. The organization is also known as: Alcatel-Lucent S.A. & Alcatel.

Learning algorithms for classification: A comparison on handwritten digit recognition

Abstract: This paper compares the performance of several classi er algorithms on a standard database of handwritten digits. We consider not only raw accuracy, but also training time, recognition time, and memory requirements. When available, we report measurements of the fraction of patterns that must be rejected so that the remaining patterns have misclassi cation rates less than a given threshold.

Software quality and the Capability Maturity Model

Abstract: A bout the time Fred Brooks was warning us there was not likely to be a single, “silver bullet” solution to the essential difficulties of developing software [3], Watts Humphrey and others at the Software Engineering Institute (SEI) were busy putting together the set of ideas that was to become the Capability Maturity Model (CMM) for Software. The CMM adopted the opposite of the quick-fix silver bullet philosophy. It was intended to be a coherent, ordered set of incremental improvements, all having experienced success in the field, packaged into a roadmap that showed how effective practices could be built on one another in a logical progression (see “The Capability Maturity Model for Software” sidebar). Far from a quick fix, it was

Dual-material gate (DMG) field effect transistor

Abstract: A generic new type of field effect transistor (FET), the dual material gate (DMG) FET, is proposed and demonstrated. The gate of the DMGFET consists of two laterally contacting materials with different work functions. This novel gate structure takes advantage of material work function difference in such a way that the threshold voltage near the source is more positive than that near the drain (for n-channel FET, the opposite for p-channel FET), resulting in a more rapid acceleration of charge carriers in the channel and a screening effect to suppress short-channel effects. Using the heterostructure FET as a vehicle, the principle, computer simulation results, design guidelines, processing, and characterization of the DMGFET are discussed in detail.

Non-Fermi-liquid states and pairing instability of a general model of copper oxide metals

Abstract: A model of copper-oxygen bonding and antibonding bands with the most general two-body interactions allowable by symmetry is considered. The model has a continuous transition as a function of hole density x and temperature T to a phase in which a current circulates in each unit cell. This phase preserves the translational symmetry of the lattice while breaking time-reversal invariance and fourfold rotational symmetry. The product of time reversal and fourfold rotation is preserved. The circulating current phase terminates at a critical point at x=${\mathrm{x}}_{\mathrm{c}}$, T=0. In the quantum critical region about this point the logarithm of the frequency of the current fluctuations scales with their momentum. The microscopic basis for the marginal Fermi-liquid phenemenology and the observed long-wavelength transport anomalies near x=${\mathrm{x}}_{\mathrm{c}}$ are derived from such fluctuations. The symmetry of the current fluctuations is such that the associated magnetic field fluctuations are absent at oxygen sites and have the correct form to explain the anomalous copper nuclear relaxation rate. Crossovers to the Fermi-liquid phase on either side of ${\mathrm{x}}_{\mathrm{c}}$ and the role of disorder are briefly considered. The current fluctuations promote superconductive instability with a propensity towards ``D-wave'' symmetry or ``extended S-wave''symmetry depending on details of the band structure. Several experiments are proposed to test the theory.