Alcatel-Lucent

About: Alcatel-Lucent is a based out in Stuttgart, Germany. It is known for research contribution in the topics: Signal & Network packet. The organization has 37003 authors who have published 53332 publications receiving 1430547 citations. The organization is also known as: Alcatel-Lucent S.A. & Alcatel.

File system for a data storage device having a power fail recovery mechanism for write/replace operations

Abstract: The present invention provides a method and apparatus in a data storage device of a data storage system under the control of a microprocessor for preventing a microprocessor stall upon the occurrence of a power failure during read/write operations. During normal operations, files are written to a first storage area of the data storage device where a first flag associated with each file is set when the writing of the respective file has successfully completed. Upon the occurrence of a power failure, a data storage device initialization routine is commenced upon reboot of the microprocessor. During initialization, an analysis phase is begun to generate sequences of events for at least those files not having the first flag set. The events comprise memory operations and associated data and are each re-executable upon interruption of its execution and before execution of another event without modifying results of a previous execution of the respective event. The events generated are then written to an event storage area in the data storage device. During an execution phase of the data storage device initialization, the events are retrieved and executed by the microprocessor to cause the files having at least the first flag set to be written in a compacted manner to storage locations in a second storage area of the memory device to maintain the integrity of those files. Subsequently, the first storage area of the memory device is erased to provide additional storage space for the writing of new files to the memory device. If a power failure or system failure occurs during the two-phase initialization process, the process is re-started generally at the point where it was interrupted so as not to leave the data storage device in a partially compacted, and hence, a potentially inconsistent state.

On optical burst switching and self-similar traffic

Abstract: In this letter we consider burst switching for very high speed routing in the next generation Internet backbone. In this scenario, Internet protocol (IP) packets to a given destination are collected in bursts at the network edges. We propose a burst assembly mechanism that can reduce the traffic autocorrelation or degree of self-similarity, and at the same time keep the delay due to burst formation limited at the network edges.

Aspects of the Statistical Thermodynamics of Real Fluids

Abstract: By extending the ideas previously applied to the statistical mechanical theory of hard sphere fluids of Reiss, Frisch, and Lebowitz, an approximate expression has been determined for the work of creating a spherical cavity in a real fluid. In turn the knowledge of this entity permits an evaluation of properties such as the surface tension and the normal heats of vaporization of fluids and the Henry's law constants of fluid mixtures. The agreement between the calculated and experimental properties is satisfactory.

Nonlinear micromechanical Casimir oscillator.

Abstract: The Casimir force between uncharged metallic surfaces originates from quantum-mechanical zero-point fluctuations of the electromagnetic field. We demonstrate that this quantum electrodynamical effect has a profound influence on the oscillatory behavior of microstructures when surfaces are in close proximity $(\ensuremath{\le}100\mathrm{nm})$. Frequency shifts, hysteretic behavior, and bistability caused by the Casimir force are observed in the frequency response of a periodically driven micromachined torsional oscillator.

Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Abstract: Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length /spl lambda/, over which the source and drain perturb the channel potential, is 1//spl pi/ of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.