scispace - formally typeset
Search or ask a question
Institution

Alpha Industries

About: Alpha Industries is a based out in . It is known for research contribution in the topics: Notching & Amplifier. The organization has 116 authors who have published 114 publications receiving 2426 citations.
Topics: Notching, Amplifier, MESFET, Microstrip, Signal


Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, the theoretical modeling and practical design of millimeter wave reflectarrays using microstrip patch elements of variable size is discussed and a full-wave treatment of plane wave reflection from a uniform infinite array of microstrip patches is described and used to generate the required patch-design data and to calculate the radiation patterns of the reflectarray.
Abstract: This paper discusses the theoretical modeling and practical design of millimeter wave reflectarrays using microstrip patch elements of variable size. A full-wave treatment of plane wave reflection from a uniform infinite array of microstrip patches is described and used to generate the required patch-design data and to calculate the radiation patterns of the reflectarray. The critical parameters of millimeter wave reflectarray design, such as aperture efficiency, phase errors, losses, and bandwidth are also discussed. Several reflectarray feeding techniques are described, and measurements from four reflectarray design examples at 28 and 77 GHz are presented.

1,142 citations

Patent
29 Jul 2002
TL;DR: In this paper, a mirror translation loop upconverter that is capable of upconverting both constant envelope and non-constant envelope modulation formats is described. But the upconversation is performed by a pair of phase shifters.
Abstract: A mirror translation loop upconverter that is capable of upconverting both constant envelope and non-constant envelope modulation formats is disclosed. Embodiments of the invention provide the ability to upconvert a transmit signal that includes only a phase-modulated component, only an amplitude-modulated component, or both a phase-modulated component and an amplitude-modulated component. If the transmit signal includes both a phase-modulated signal component and an amplitude-modulated signal component, the phase-modulated signal component and the amplitude-modulated signal component are supplied to a pair of phase shifters. The phase shifters alter the phase of the phase-modulated signal by an amount related to the amplitude of the amplitude-modulated signal. The phase shifters oppositely alter the phase of the phase-modulated signal, and therefore supply complementary phase versions of the phase-modulated signal. The phase-altered phase-modulated signals from the phase shifters are then supplied to a pair of translation loops. The translation loops are arranged in mirror architecture so that each translation loop receives the phase-altered phase-modulated signals. Each translation loop upconverts the signals and supplies a vector. The vectors supplied by the two translation loops are constant in magnitude, and have complementary phase. The two vectors are added together to provide a signal to a power amplifier. The signal represents both the phase and amplitude information to be transmitted.

79 citations

Proceedings ArticleDOI
C.J. Wei, P. DiCarlo1, Y.A. Tkachenko1, R. McMorrow1, D. Bartle1 
11 Jun 2000
TL;DR: In this paper, the inverse class F operation mode for high-efficiency power amplifiers is analyzed, which requires an open circuit termination at the second harmonic and a small impedance termination on the third harmonic.
Abstract: The new inverse class F operation mode for high-efficiency power amplifiers is analyzed. Unlike regular class F, it requires an open circuit termination at the second harmonic and a small impedance termination at the third harmonic. The inverse class F features higher PAE than class F but requires transistors with higher breakdown voltages. A study performed using the waveform measurement technique in conjunction with the active/passive load-pull system showed PAE=83% for the inverse class F compared to PAE=64% for the class F. The measured results are in good agreement with the analytical prediction.

69 citations

Patent
King W1
28 Mar 1969
TL;DR: In this article, an electron stripping gas is used to project positive ions through a relatively low energy to obtain positive ions which are multiply ionized or charged, and then accelerated by a relatively high accelerating voltage to achieve an energy suitable for ion implantation in a semiconductor matrix.
Abstract: The apparatus disclosed herein provides high energy positive ions, suitable for semiconductor doping, by projecting positive ions through an electron stripping gas at relatively low energy thereby to obtain positive ions which are multiply ionized or charged. Those ions which are raised to a preselected ionization level or state are segregated, and then accelerated by a relatively high accelerating voltage to achieve an energy suitable for ion implantation in a semiconductor matrix. Since the ions subjected to the relatively high accelerating voltage are multiply ionized, the energy imparted thereto, measured in electron volts, is substantially equal to an integer multiple of the accelerating voltage.

58 citations


Network Information
Related Institutions (5)
Infineon Technologies
33.9K papers, 230K citations

74% related

STMicroelectronics
29.5K papers, 300.7K citations

72% related

STATS ChipPAC Ltd
1.2K papers, 25.1K citations

72% related

Freescale Semiconductor
10.7K papers, 149.1K citations

69% related

IMEC
6.7K papers, 105.3K citations

68% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20031
20028
20018
20002
19993
19974