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Institution

ams AG

CompanyUnterpremstätten, Austria
About: ams AG is a company organization based out in Unterpremstätten, Austria. It is known for research contribution in the topics: Signal & Transistor. The organization has 616 authors who have published 1371 publications receiving 6531 citations. The organization is also known as: Austriamicrosystems AG & ams ag.
Topics: Signal, Transistor, CMOS, Layer (electronics), Voltage


Papers
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Journal ArticleDOI
TL;DR: Recent progress in the packaging of silicon photonic circuits from on-CMOS wafer-level integration to the single-chip package and input/output interconnects is reviewed, focusing on optical fiber-coupling structures comparing edge and surface couplers.
Abstract: Silicon photonics is a new technology that should at least enable electronics and optics to be integrated on the same optoelectronic circuit chip, leading to the production of low-cost devices on silicon wafers by using standard processes from the microelectronics industry. In order to achieve real-low-cost devices, some challenges need to be taken up concerning the integration technological process of optics with electronics and the packaging of the chip. In this paper, we review recent progress in the packaging of silicon photonic circuits from on-CMOS wafer-level integration to the single-chip package and input/output interconnects. We focus on optical fiber-coupling structures comparing edge and surface couplers. In the following, we detail optical alignment tolerances for both coupling architecture, discussing advantages and drawbacks from the packaging process point of view. Finally, we describe some achievements involving advanced-packaging techniques.

255 citations

Proceedings ArticleDOI
12 Mar 2012
TL;DR: A general and flexible architecture for battery management implementation and the main techniques for state-of-charge estimation and charge balancing are reported and an innovative BMS is described, which incorporates an almost fully-integrated active charge equalizer.
Abstract: The battery is a fundamental component of electric vehicles, which represent a step forward towards sustainable mobility. Lithium chemistry is now acknowledged as the technology of choice for energy storage in electric vehicles. However, several research points are still open. They include the best choice of the cell materials and the development of electronic circuits and algorithms for a more effective battery utilization. This paper initially reviews the most interesting modeling approaches for predicting the battery performance and discusses the demanding requirements and standards that apply to ICs and systems for battery management. Then, a general and flexible architecture for battery management implementation and the main techniques for state-of-charge estimation and charge balancing are reported. Finally, we describe the design and implementation of an innovative BMS, which incorporates an almost fully-integrated active charge equalizer.

148 citations

Journal ArticleDOI
Urs Denier1
TL;DR: The application field for this oscillator is the clock generation of low-power wake-up functions for battery-operated systems and a detailed analysis of the oscillator, including the temperature performance, is derived and verified with experimental results.
Abstract: This paper presents the design of a low-voltage ultralow-power relaxation oscillator without external components. The application field for this oscillator is the clock generation of low-power wake-up functions for battery-operated systems. A detailed analysis of the oscillator, including the temperature performance, is derived and verified with experimental results. The oscillator operates at a typical frequency of 3.3 kHz and consumes 11 nW from a 1-V supply at room temperature, and a temperature drift of less than 500 ppm/°C is achieved over the temperature range of -20°C to 80°C. An efficient design implementation has resulted in a cell area of 0.1 mm2 in a standard 0.35- μm digital CMOS technology.

136 citations

Patent
Rainer Minixhofer1, Georg Roehrer1
16 Dec 2003
TL;DR: A bipolar transistor formed in a substrate includes a collector, a base layer above the collector, where the base layer includes a base that is monocrystalline, and an emitter layer that is polysilicon or silicon-germanium as mentioned in this paper.
Abstract: A bipolar transistor formed in a substrate includes a collector, a base layer above the collector, where the base layer includes a base that is monocrystalline, and an emitter layer that is monocrystalline and above the base, where the emitter layer includes silicon or silicon-germanium. An intermediate layer is above the base layer and below the emitter layer. The intermediate layer includes silicon carbide. The intermediate layer is grown epitaxially and is etchable in a dry plasma relative to the emitter layer.

116 citations

Journal ArticleDOI
01 Dec 2008-Micron
TL;DR: Steps to improve the success yield of the in situ lift- out technique are presented, including tapping the plinth of the system and monitoring the grounding current to check the lift-out needle is fixed to the material being removed.

93 citations


Authors

Showing all 616 results

NameH-indexPapersCitations
David Stoppa371984382
Franz Renz311404547
Wilhelm Graupner291062602
Maik Scheller291463189
Paul O'Leary261612902
Markus Rossi231121771
Josip Mikulić21851214
Hubert Zangl202211818
Chuni Ghosh1863975
Serdal Okur1651804
Syed Zeeshan Ali16721024
Jean-Francois Seurin1645606
Thomas Winkler1537750
Hubert Enichlmair1482627
Franz Schrank141491001
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20221
202125
202045
201980
201859
201764