Showing papers by "AT&T Labs published in 1985"
Patent•
26 Jun 1985TL;DR: In this article, two input stages (10,12) are interconnected so that their input common mode voltage ranges to one side of signal ground are combined to provide a commonmode voltage range substantially equal to the supply voltage, and the output (22) is taken from one branch of the N-type stage (10) and coupled to an output stage (24) with frequency compensation.
Abstract: Two input stages (10,12) are interconnected so that their input common mode voltage ranges to one side of signal ground are combined to provide a common mode voltage range substantially equal to the supply voltage. One stage has N-channel differential input transistors (N1, N2), while the other stage has P-channel differential input transistors (P3,P4). The input current branches of the stages are interconnected by current mirror transistors (N6,N7) so that signal current is shared. The output (22) is taken from one branch of the N-type stage (10) and coupled to an output stage (24) with frequency compensation (C,R).
69 citations
TL;DR: In this paper, limit theorems for the queue-length process in a Σ GIi/G/s model, in which the arrival process is the superposition of n independent and identically distributed stationary renewal processes each with rate n−1.
39 citations
33 citations
Patent•
16 Sep 1985TL;DR: A low temperature procedure for deposition of III-V semiconductor materials that offers the possibility of higher deposition rates together with abrupt junction formation has been found as mentioned in this paper, which involves the irradiation at a deposition substrate with a high power density radiation source of deposition gases such as organometallic materials, e.g., trimethyl gallium and trimethyl indium.
Abstract: A low temperature procedure for depositing III-V semiconductor materials that offers the possibility of higher deposition rates together with abrupt junction formation has been found. This process involves the irradiation at a deposition substrate with a high power density radiation source of deposition gases such as organometallic materials, e.g., trimethyl gallium and trimethyl indium. By utilizing a sufficiently high power density, multiphoton processes are induced in the deposition gas that, in turn, lead to advantageous deposited materials.
16 citations