Institution
Beijing University of Technology
Education•Beijing, Beijing, China•
About: Beijing University of Technology is a education organization based out in Beijing, Beijing, China. It is known for research contribution in the topics: Microstructure & Computer science. The organization has 31929 authors who have published 31987 publications receiving 352112 citations. The organization is also known as: Běijīng Gōngyè Dàxué & Beijing Polytechnic University.
Papers published on a yearly basis
Papers
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TL;DR: In this article, a meso-scale simulation method was built to study the dynamic failure and size effect of concrete, and the strain rate effect for the meso components were also taken into account.
125 citations
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TL;DR: A novel system integrating anaerobic/anoxic/oxic and biological aerated filter (BAF), which could solve the sludge retention time (SRT) conflicting problem between nitrifiers and polyphosphate accumulating organisms (PAOs) by shortening SRT for PAOs in A(2)/O and lengthening SRT in BAF, was investigated in this study.
125 citations
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TL;DR: In this paper, the authors presented a comprehensive exergy analysis of three circuits and whole system of a ground-source heat pump (GSHP) for both building heating and cooling modes.
125 citations
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TL;DR: In this article, the influence of the anisotropic structure on in-plane optical and electrical anisotropy of 2D GeAs, a novel group IV-V semiconductor, was investigated both experimentally and theoretically.
Abstract: Anisotropic 2D materials exhibit unique optical, electrical, and thermoelectric properties that open up possibilities for diverse angle-dependent devices. However, the explored anisotropic 2D materials are very limited and the methods to identify the crystal orientations and to study the in-plane anisotropy are in the initial stage. Here azimuth-dependent reflectance difference microscopy (ADRDM), angle-resolved Raman spectra, and electrical transport measurements are used to systematically characterize the influence of the anisotropic structure on in-plane optical and electrical anisotropy of 2D GeAs, a novel group IV–V semiconductor. It is proved that ADRDM offers a way to quickly identify the crystal orientations and also to directly characterize the in-plane optical anisotropy of layered GeAs. The anisotropic electrical transport behavior of few-layer GeAs field-effect transistors is further measured and the anisotropic ratio of the mobility is as high as 4.6, which is higher than the other 2D anisotropic materials such as black phosphorus. The dependence of the Raman intensity anisotropy on the sample thickness, excitation wavelength, and polarization configuration is investigated both experimentally and theoretically. These data will be useful for designing new high-performance devices and the results suggest a general methodology for characterizing the in-plane anisotropy of low-symmetry 2D materials.
125 citations
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TL;DR: In this study, a sequencing batch reactor was used to achieve advanced nitrogen removal by simultaneous Anammox and denitrification processes, and the maximum total nitrogen removal efficiency of 97.47% was obtained at C/N of 2.
125 citations
Authors
Showing all 32228 results
Name | H-index | Papers | Citations |
---|---|---|---|
Zhong Lin Wang | 245 | 2529 | 259003 |
Pulickel M. Ajayan | 176 | 1223 | 136241 |
James M. Tour | 143 | 859 | 91364 |
Dacheng Tao | 133 | 1362 | 68263 |
Lei Zhang | 130 | 2312 | 86950 |
Hong-Cai Zhou | 114 | 489 | 66320 |
Xiaodong Li | 104 | 1300 | 49024 |
Lin Li | 104 | 2027 | 61709 |
Ming Li | 103 | 1669 | 62672 |
Wenjun Zhang | 96 | 976 | 38530 |
Lianzhou Wang | 95 | 596 | 31438 |
Miroslav Krstic | 95 | 955 | 42886 |
Zhiguo Yuan | 93 | 633 | 28645 |
Xiang Gao | 92 | 1359 | 42047 |
Xiao-yan Li | 85 | 528 | 31861 |