Bharat Electronics

About: Bharat Electronics is a company organization based out in Bengaluru, India. It is known for research contribution in the topics: Molecular beam epitaxy & Microstrip. The organization has 491 authors who have published 476 publications receiving 3568 citations. The organization is also known as: Bhārat ilekṭrawnik.

Image fusion based on pixel significance using cross bilateral filter

Abstract: Like bilateral filter (BF), cross bilateral filter (CBF) considers both gray-level similarities and geometric closeness of the neighboring pixels without smoothing edges, but it uses one image for finding the kernel and other to filter, and vice versa. In this paper, it is proposed to fuse source images by weighted average using the weights computed from the detail images that are extracted from the source images using CBF. The performance of the proposed method has been verified on several pairs of multisensor and multifocus images and compared with the existing methods visually and quantitatively. It is found that, none of the methods have shown consistence performance for all the performance metrics. But as compared to them, the proposed method has shown good performance in most of the cases. Further, the visual quality of the fused image by the proposed method is superior to other methods.

Multifocus and multispectral image fusion based on pixel significance using discrete cosine harmonic wavelet transform

Abstract: The energy compaction and multiresolution properties of wavelets have made the image fusion successful in combining important features such as edges and textures from source images without introducing any artifacts for context enhancement and situational awareness. The wavelet transform is visualized as a convolution of wavelet filter coefficients with the image under consideration and is computationally intensive. The advent of lifting-based wavelets has reduced the computations but at the cost of visual quality and performance of the fused image. To retain the visual quality and performance of the fused image with reduced computations, a discrete cosine harmonic wavelet (DCHWT)-based image fusion is proposed. The performance of DCHWT is compared with both convolution and lifting-based image fusion approaches. It is found that the performance of DCHWT is similar to convolution-based wavelets and superior/similar to lifting-based wavelets. Also, the computational complexity (in terms of additions and multiplications) of the proposed method scores over convolution-based wavelets and is competitive to lifting-based wavelets.

Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes

Abstract: The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of metal–insulator–semiconductor (MIS) GaAs Schottky diodes are investigated and compared with metal–semiconductor (MS) diodes. The MIS diode showed nonideal behavior of I–V characteristics with an ideality factor of 1.17 and a barrier height of 0.97 eV. The energy distribution of interface states density was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height, though it is small. The reduction in the saturation current in the MIS case is caused by a thin oxide layer and is due to the combination of increased barrier height and a decrease in the Richardson constant. The carrier concentration anomaly observed between the MIS and MS diodes measured from reverse bias C–V measurements is explained via oxide $(\beta-Ga_2O_3)$ traps due to the Ga-vacancy by deep level transient spectroscopy (DLTS) measurement.