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Institution

California Institute of Technology

EducationPasadena, California, United States
About: California Institute of Technology is a education organization based out in Pasadena, California, United States. It is known for research contribution in the topics: Galaxy & Population. The organization has 57649 authors who have published 146691 publications receiving 8620287 citations. The organization is also known as: Caltech & Cal Tech.


Papers
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Journal ArticleDOI
TL;DR: It is proposed that the mechanism of the reaction involves the joining of short, homologous sites on the two strands followed by a fast, reversible zippering reaction with forward rate constant kt, which explains the temperature and the GC dependence.

1,355 citations

Journal ArticleDOI
TL;DR: In this paper, a protocol for teleportation of a single mode of the electromagnetic field with high fidelity using squeezed-state entanglement and current experimental capability is presented, including the roles of finite quantum correlation and nonideal detection efficiency.
Abstract: Quantum teleportation is analyzed for states of dynamical variables with continuous spectra, in contrast to previous work with discrete (spin) variables. The entanglement fidelity of the scheme is computed, including the roles of finite quantum correlation and nonideal detection efficiency. A protocol is presented for teleporting the wave function of a single mode of the electromagnetic field with high fidelity using squeezed-state entanglement and current experimental capability.

1,351 citations

Journal ArticleDOI
TL;DR: The results indicate that the use of SPs would lead to a new class of very bright LEDs, and highly efficient solid-state light sources.
Abstract: Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devices have not fulfilled their original promise as solid-state replacements for light bulbs as their light-emission efficiencies have been limited. Here we describe a method to enhance this efficiency through the energy transfer between quantum wells (QWs) and surface plasmons (SPs). SPs can increase the density of states and the spontaneous emission rate in the semiconductor, and lead to the enhancement of light emission by SP–QW coupling. Large enhancements of the internal quantum efficiencies (etaint) were measured when silver or aluminium layers were deposited 10 nm above an InGaN light-emitting layer, whereas no such enhancements were obtained from gold-coated samples. Our results indicate that the use of SPs would lead to a new class of very bright LEDs, and highly efficient solid-state light sources.

1,349 citations

Journal ArticleDOI
21 Jan 2015-Neuron
TL;DR: The data suggest that BBB breakdown is an early event in the aging human brain that begins in the hippocampus and may contribute to cognitive impairment.

1,347 citations

Journal ArticleDOI
TL;DR: The observed absorption enhancement and collection efficiency enable a cell geometry that not only uses 1/100th the material of traditional wafer-based devices, but also may offer increased photovoltaic efficiency owing to an effective optical concentration of up to 20 times.
Abstract: The use of silicon nanostructures in solar cells offers a number of benefits, such as the fact they can be used on flexible substrates. A silicon wire-array structure, containing reflecting nanoparticles for enhanced absorption, is now shown to achieve 96% peak absorption efficiency, capturing 85% of light with only 1% of the silicon used in comparable commercial cells. Si wire arrays are a promising architecture for solar-energy-harvesting applications, and may offer a mechanically flexible alternative to Si wafers for photovoltaics1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17. To achieve competitive conversion efficiencies, the wires must absorb sunlight over a broad range of wavelengths and incidence angles, despite occupying only a modest fraction of the array’s volume. Here, we show that arrays having less than 5% areal fraction of wires can achieve up to 96% peak absorption, and that they can absorb up to 85% of day-integrated, above-bandgap direct sunlight. In fact, these arrays show enhanced near-infrared absorption, which allows their overall sunlight absorption to exceed the ray-optics light-trapping absorption limit18 for an equivalent volume of randomly textured planar Si, over a broad range of incidence angles. We furthermore demonstrate that the light absorbed by Si wire arrays can be collected with a peak external quantum efficiency of 0.89, and that they show broadband, near-unity internal quantum efficiency for carrier collection through a radial semiconductor/liquid junction at the surface of each wire. The observed absorption enhancement and collection efficiency enable a cell geometry that not only uses 1/100th the material of traditional wafer-based devices, but also may offer increased photovoltaic efficiency owing to an effective optical concentration of up to 20 times.

1,346 citations


Authors

Showing all 58155 results

NameH-indexPapersCitations
Eric S. Lander301826525976
Donald P. Schneider2421622263641
George M. Whitesides2401739269833
Yi Chen2174342293080
David Baltimore203876162955
Edward Witten202602204199
George Efstathiou187637156228
Michael A. Strauss1851688208506
Jing Wang1844046202769
Ruedi Aebersold182879141881
Douglas Scott1781111185229
Hyun-Chul Kim1764076183227
Phillip A. Sharp172614117126
Timothy M. Heckman170754141237
Zhenan Bao169865106571
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
2023176
2022737
20214,682
20205,519
20195,321
20185,133