Chonbuk National University

About: Chonbuk National University is a education organization based out in Jeonju, South Korea. It is known for research contribution in the topics: Apoptosis & Graphene. The organization has 14820 authors who have published 28884 publications receiving 554131 citations.

Oncogenic MicroRNA-27a Is A Target For Anticancer Agent Methyl 2-Cyano-3,11-dioxo-18β-olean-1,12-dien-30-oate in Colon Cancer Cells

Abstract: Methyl 2-cyano-3,11-dioxo-18beta-olean-1,12-dien-30-oate (CDODA-Me) is a synthetic derivative of glycyrrhetinic acid, a triterpenoid phytochemical found in licorice extracts. CDODA-Me inhibited growth of RKO and SW480 colon cancer cells and this was accompanied by decreased expression of Sp1, Sp3 and Sp4 protein and mRNA and several Sp-dependent genes including survivin, vascular endothelial growth factor (VEGF), and VEGF receptor 1 (VEGFR1 or Flt-1). CDODA-Me also induced apoptosis, arrested RKO and SW480 cells at G(2)/M, and inhibited tumor growth in athymic nude mice bearing RKO cells as xenografts. CDODA-Me decreased expression of microRNA-27a (miR-27a), and this was accompanied by increased expression of 2 miR-27a-regulated mRNAs, namely ZBTB10 (an Sp repressor) and Myt-1 which catalyzes phosphorylation of cdc2 to inhibit progression of cells through G(2)/M. Both CDODA-Me and antisense miR-27a induced comparable responses in RKO and SW480 cells, suggesting that the potent anticarcinogenic activity of CDODA-Me is due to repression of oncogenic miR-27a.

Memristor-based multilevel memory

Abstract: A method to utilize the memristor as a multilevel memory has been proposed. There are several roadblocks in the practical use of memristors for multilevel memory. A difficulty comes from the nonlinearity in the ? vs. q curve which makes it difficult to determine the proper pulse width for desired resistance values. Another one comes from the property of the memristor which integrates any kind of signals including noise that appeared at the memristor and causes memristors to be perturbed from their original values. The proposed method enables the memristor to be used as multilevel memory using a reference resistance array by forcing the memristor to stick at a set of predetermined fixed reference resistance values. We propose the write-in (programming) circuit and the readout/restoration circuit which share the information storing technique using the reference resistance array.