Cochin University of Science and Technology

About: Cochin University of Science and Technology is a education organization based out in Kochi, Kerala, India. It is known for research contribution in the topics: Thin film & Natural rubber. The organization has 5382 authors who have published 7690 publications receiving 103827 citations. The organization is also known as: CUSAT & Cochin University.

IS/IT Project Failures: A Review of the Extant Literature for Deriving a Taxonomy of Failure Factors

Abstract: The majority of the existing literature is based upon the assumption that, by paying attention to success factors, failure will be avoided In the case of challenged projects, where failure factors are overcome the projects go on to be delivered successfully Hence, it is worthwhile to explore the key factors that determine failure, since this information may be useful in averting future project failures This research aims to collate and classify existing research in order to: (1) understand the common failure factors; and (2) categorise identified factors pertaining to country, project stage and failure categories In so doing, this research work goes beyond the identification of traditional factors since it further classifies them according to project stages, failure types and geographical regions This research contributes to knowledge by identifying and synthesising existing understanding of the failure of IS/IT projects

Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

Abstract: The optical and carrier transport properties of amorphous transparent zinc indium tin oxide ZITOa-ZITO thin films and the characteristics of the thin-film transistors TFTs were examined as a function of chemical composition. The as-deposited films were very conductive and showed clear free carrier absorption FCA. The analysis of the FCA gave the effective mass value of 0.53 me and a momentum relaxation time of 3.9 fs for an a-ZITO film with Zn:In:Sn = 0.35:0.35:0.3. TFTs with the as-deposited channels did not show current modulation due to the high carrier density in the channels. Thermal annealing at 300°C decreased the carrier density and TFTs fabricated with the annealed channels operated with positive threshold voltages VT when Zn contents were 25 atom % or larger. VT shifted to larger negative values, and subthreshold voltage swing increased with decreasing the Zn content, while large on‐off current ratios 10 7 ‐10 8 were kept for all the Zn contents. The field effect mobilities ranged from 12.4 to 3.4 cm 2 V