Institution
Dalian University of Technology
Education•Dalian, China•
About: Dalian University of Technology is a education organization based out in Dalian, China. It is known for research contribution in the topics: Catalysis & Finite element method. The organization has 60890 authors who have published 71921 publications receiving 1188356 citations. The organization is also known as: Dàlián Lǐgōng Dàxué.
Papers published on a yearly basis
Papers
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TL;DR: In this article, it is shown that M-S-H pastes can be prepared by reacting magnesium oxide (MgO) and silica fume (SF) at low water to solid ratio using sodium hexametaphosphate (NaHMP) as a dispersant.
186 citations
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TL;DR: The objective of this study is to reveal and distinguish the individual roles of different activating agents during AC synthesis, highlighting the development of activating agent roles during the process of AC.
186 citations
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TL;DR: In this article, the effect of some mercapto-triazole derivatives synthesized in the laboratory containing different hetero atoms and substituents in the organic structures on the corrosion and hydrogen permeation of mild steel was investigated by weight loss and various electrochemical techniques.
186 citations
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TL;DR: The failure of quinones to replicate graphene stimulation effects on methanogenesis suggested that graphene did not function as electron shuttles, and further investigation indicated that acetate-consuming meethanogenesis was enhanced.
186 citations
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TL;DR: In this article, the authors showed that a perfect single-layer sheet of TMDs stays intact when exposed in O2 due to the weak physical adsorption of O2.
Abstract: Monolayer transition metal dichalcogenides (TMDs) stand out in two-dimensional (2D) materials due to their potential applications in future microelectronic and optoelectronic devices. In experiments, field effect transistors (FET) based on the MoS2 monolayer are sensitive to environmental gases, especially O2. Thus, the oxidation of monolayer TMDs is a critical concern. By first-principles calculations, we reveal that a perfect single-layer sheet of TMDs stays intact when exposed in O2 due to the weak physical adsorption of O2. However, O2 can be chemically adsorbed onto the monolayer of TMDs (including MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2) with single vacancies of chalcogen, which are the most common defects in realistic TMD materials. The adsorption configurations and dissociation behavior of the O2 molecule at vacancy sites, as well as the possible diffusion behavior of oxygen adatoms on the TMD monolayer surface were explored. Oxidation significantly influenced the electronic properties of a defective MoS2 monolayer, while other defective TMD monolayers (especially MoTe2 and WTe2) suffered less from oxidation. Our theoretical results provide valuable atomistic insight into the oxidation of TMD monolayers and are useful for the future design of TMD-based 2D devices.
185 citations
Authors
Showing all 61205 results
Name | H-index | Papers | Citations |
---|---|---|---|
Yang Yang | 171 | 2644 | 153049 |
Yury Gogotsi | 171 | 956 | 144520 |
Hui Li | 135 | 2982 | 105903 |
Michael I. Posner | 134 | 414 | 104201 |
Anders Hagfeldt | 129 | 600 | 79912 |
Jian Zhou | 128 | 3007 | 91402 |
Chao Zhang | 127 | 3119 | 84711 |
Bin Wang | 126 | 2226 | 74364 |
Chi Lin | 125 | 1313 | 102710 |
Tao Zhang | 123 | 2772 | 83866 |
Bo Wang | 119 | 2905 | 84863 |
Zhenyu Zhang | 118 | 1167 | 64887 |
Liang Cheng | 116 | 1779 | 65520 |
Anthony G. Fane | 112 | 565 | 40904 |
Xuelong Li | 110 | 1044 | 46648 |