Delft University of Technology

About: Delft University of Technology is a education organization based out in Delft, Zuid-Holland, Netherlands. It is known for research contribution in the topics: Population & Catalysis. The organization has 37681 authors who have published 94404 publications receiving 2741710 citations. The organization is also known as: TU-Delft & Technische Hogeschool Delft.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

Abstract: We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Absorbing Boundary Conditions for the Finite-Difference Approximation of the Time-Domain Electromagnetic-Field Equations

Abstract: When time-domain electromagnetic-field equations are solved using finite-difference techniques in unbounded space, there must be a method limiting the domain in which the field is computed. This is achieved by truncating the mesh and using absorbing boundary conditions at its artificial boundaries to simulate the unbounded surroundings. This paper presents highly absorbing boundary conditions for electromagnetic-field equations that can be used for both two-and three-dimensional configurations. Numerical results are given that clearly exhibit the accuracy and limits of applicability of highly absorbing boundary conditions. A simplified, but equally accurate, absorbing condition is derived for two- dimensional time-domain electromagnetic-field problems.

Quantized conductance of point contacts in a two-dimensional electron gas.

Abstract: As a result of the high mobihty attamable in the twodimensional electron gas (2DEG) in GaAs-AlGaAs heterostructures it is now becoming feasible to study ballistic transport in small devices '"6 In metals ideal tools for such studies are constnctions havng a width W and length L much smaller than the mean free path le These are known as Sharvin pomt contacts 7 Because of the ballistic transport through these constnctions, the resistance is determmed by the pomt-contact geometry only Point contacts have been used extensively for the study of elastic and melastic electron scattermg With use of biased pomt contacts, electrons can be mjected mto metals at energies above the Fermi level This allows the study of the energy dependence of the scattermg mechamsms 8 With the use of a geometry containmg two pomt contacts, with Separation smaller than le, electrons mjected by a pomt contact can be focused mto the other contact, by the application of a magnetic field This technique (transverse electron focusmg) has been applied to the detailed study of Fermi surfaces 9 In this Letter we report the first expenmental study of the resistance of ballistic pomt contacts m the 2DEG of high-mobihty GaAs-AlGaAs heterostructures The smgle-pomt contacts discussed m this paper are part of a double-pomt-contact device The results of transverse electron focusmg m these devices will be published elsewhere '° The pomt contacts are dehned by electrostatic depletion of the 2DEG underneath a gate This method, which has been used by several authors for the study of l D conduction,'1 offers the possibility to control the width of the pomt contact by the gate voltage Control of the width is not feasible in metal pomt contacts

Optical multi-mode interference devices based on self-imaging: principles and applications

Abstract: This paper presents an overview of integrated optics routing and coupling devices based on multimode interference. The underlying self-imaging principle in multimode waveguides is described using a guided mode propagation analysis. Special issues concerning the design and operation of multimode interference devices are discussed, followed by a survey of reported applications. It is shown that multimode interference couplers offer superior performance, excellent tolerance to polarization and wavelength variations, and relaxed fabrication requirements when compared to alternatives such as directional couplers, adiabatic X- or Y-junctions, and diffractive star couplers. >