Showing papers by "fondazione bruno kessler published in 2006"

Automated Planning, Theory And Practice

Abstract: 1 Introduction and Overview I Classical Planning 2 Representations for Classical Planning*3 Complexity of Classical Planning*4 State-Space Planning*5 Plan-Space Planning II Neoclassical Planning 6 Planning-Graph Techniques*7 Propositional Satisfiability Techniques*8 Constraint Satisfaction Techniques III Heuristics and Control Strategies 9 Heuristics in Planning*10 Control Rules in Planning*11 Hierarchical Task Network Planning*12 Control Strategies in Deductive Planning IV Planning with Time and Resources 13 Time for Planning*14 Temporal Planning*15 Planning and Resource Scheduling V Planning under Uncertainty 16 Planning based on Markov Decision Processes*17 Planning based on Model Checking*18 Uncertainty with Neo-Classical Techniques VI Case Studies and Applications 19 Space Applications*20 Planning in Robotics*21 Planning for Manufacturability Analysis*22 Emergency Evacuation Planning *23 Planning in the Game of Bridge VII Conclusion 24 Conclusion and Other Topics VIII Appendices A Search Procedures and Computational Complexity*B First Order Logic*C Model Checking

Method and apparatus for tracking a number of objects or object parts in image sequences

Abstract: A method for tracking a number of objects or object parts in image sequences utilizes a Bayesian-like approach to object tracking, computing, at each time a new image is available, a probability distribution over all possible target configurations for that time. The Bayesian-like approach to object tracking computes a probability distribution for the previous image, at time (t−1), is propagated to the new image at time (t) according to a probabilistic model of target dynamics, obtaining a predicted distribution at time (t). The Bayesian-like approach to object tracking also aligns the predicted distribution at time (t) with the evidence contained in the new image at time (t) according to a probabilistic model of visual likelihood.

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Abstract: Electrical activation and redistribution of 500eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150°C and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at 1150°C, a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find dramatic boron deactivation and transient enhanced diffusion after postannealing the one-scan samples, but very little in the five- and ten-scan samples. The results show that end-of-range defect removal during nonmelt laser annealing is an achievable method for the stabilization of highly activated boron profiles in preamorphized silicon.

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface

Abstract: The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator (SOI) has been investigated. Electrical and structural measurements after annealing show that boron deactivation and transient enhanced diffusion are reduced in SOI compared to bulk wafers. The reduction is strongest when the end-of-range defects of the preamorphizing implant are located deep within the silicon overlayer of the SOI silicon substrate. Results reveal a very substantial increase in the dissolution rate of the end-of-range defect band. A key player in this effect is the buried Si/SiO2 interface, which acts as an efficient sink for interstitials competing with the silicon surface.

Integrated view and comparison of alignment semantics

Abstract: We take a general perspective on alignment in order to develop common theoretical foundations for the subject. The deliverable comprises a comparative study of different mapping languages by means of distributed first-order logic, and a study on category-theoretical modelling of alignment and merging by means of pushout-combinations.

Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction

Abstract: P -type ultrashallow junctions are widely fabricated using Ge preamorphization prior to ultralow-energy boron implantation. However, for future technology nodes, issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). An understanding of the effect of the buried Si SiO2 interface on defect evolution, electrical activation, and diffusion is needed in order to optimize the preamorphization technique. In the present study, boron has been implanted in germanium preamorphized silicon and SOI wafers with different preamorphizing implant conditions. Subsequent to implantation an isothermal annealing study of the samples was carried out. Electrical and structural properties were measured by Hall-effect and secondary-ion-mass spectroscopy techniques. The results show a variety of interesting effects. For the case where the Ge preamorphization end-of-range defects are close to the buried oxide interface, there is less dopant deactivation and less transient-enhanced diffusion, due to a lower interstitial gradient towards the surface. © 2006 American Vacuum Society.

Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

Abstract: Formation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next generations of CMOS devices, particularly for source-drain extensions. For p-type dopant implants (boron), a promising method of increasing junction abruptness is to use Ge preamorphizing implants prior to ultra-low energy B implantation and solid-phase epitaxy regrowth to re-crystallize the amorphous Si. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Previous results have shown that the buried Si/SiO2 interface can improve dopant activation, but the effect depends on the detailed preamorphization conditions and further optimization is required. In this paper a range of B doses and Ge energies have been chosen in order to situate the end-of-range (EOR) defect band at various distances from the back interface of the active silicon film (the interface with the buried oxide), in order to explore and optimize further the effect of the interface on dopant behavior. Electrical and structural properties were measured by Hall Effect and SIMS techniques. The results show that the boron deactivates less in SOI material than in bulk silicon, and crucially, that the effect increases as the distance from the EOR defect band to the back interface is decreased. For the closest distances, an increase injunction steepness is also observed, even though the B is located close to the top surface, and thus far from the back interface. The position of the EOR defect band shows the strongest influence for lower B doses. © 2006 Materials Research Society.