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Institution

Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..


Papers
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Patent
10 Oct 2000
TL;DR: In this article, an encoder multiplies each data bit by an n-bit identifying code, (e.g., a user code), resulting in a group of wavelets corresponding to each data bits.
Abstract: An ultra-wide band (UWB) waveform generator and encoder for use in a UWB digital communication system. The UWB waveform is made up of a sequence of shaped wavelets. The waveform generator produces multi-amplitude, multi-phase wavelets that are time-constrained, zero mean, and can be orthogonal in phase, yet still have a −10 dB power spectral bandwidth that is larger than the frequency of the peak of the power spectrum In one embodiment, the wavelets are bi-phase wavelets. The encoder multiplies each data bit by an n-bit identifying code, (e.g., a user code), resulting in a group of wavelets corresponding to each data bit. The identifying codeword is passed onto the UWB waveform generator for generation of a UWB waveform that can be transmitted via an antenna.

50 citations

Patent
16 Feb 2006
TL;DR: In this paper, the interlayer dielectric (ILD) was treated differently for the SRAM array than for the logic in an integrated circuit that has logic and a static random access memory (SRAM).
Abstract: An integrated circuit that has logic and a static random access memory (SRAM) array has improved performance by treating the interlayer dielectric (ILD) differently for the SRAM array than for the logic. The N channel logic and SRAM transistors have ILDs with non-compressive stress, the P channel logic transistor ILD has compressive stress, and the P channel SRAM transistor at least has less compressive stress than the P channel logic transistor, i.e., the P channel SRAM transistors may be compressive but less so than the P channel logic transistors, may be relaxed, or may be tensile. It is beneficial for the integrated circuit for the P channel SRAM transistors to have a lower mobility than the P channel logic transistors. The P channel SRAM transistors having lower mobility results in better write performance; either better write time or write margin at lower power supply voltage.

50 citations

Journal ArticleDOI
TL;DR: This research proposes an automatic defect cluster recognition system for semiconductor wafers that achieves up to 95% accuracy (depending on the product type) and aims to address the semiconductor industry's needs.

50 citations

Patent
24 Feb 1995
TL;DR: An anti-reflective coating (ARC) is formed over a reflective, conductive layer (18) such as polysilicon or aluminum, in a semiconductor device as discussed by the authors.
Abstract: An anti-reflective coating (ARC) (20) is formed over a reflective, conductive layer (18), such as polysilicon or aluminum, in a semiconductor device (10). The ARC is an aluminum nitride layer. During photolithography, the ARC absorbs radiation waves (30), particularly absorbing wavelengths under 300 nanometers, such as deep ultraviolet (DUV) radiation at 248 nanometers. Being absorbed by the ARC, the radiation waves are prevented from reflecting off the underlying conductive layer. Thus, resist mask (34) is patterned and developed true to the pattern on lithography mask (24), resulting in accurate replication into appropriate layers of the device.

50 citations

Patent
28 Jul 2006
TL;DR: In this paper, the authors describe a single PA line-up with a variable matching circuit (216) and a variable harmonic filter (240) to tune match and tune filter communication signals prior to transmission.
Abstract: Methods and apparatus are provided to enable a transceiver (200) or transmitter including a single PA line-up (210) to transmit signals having frequencies in two or more different frequency bands, and/or having two or more different modulation types, and/or having two or more different RF power levels. The single PA line-up includes at least one variable matching circuit (216) and a variable harmonic filter (240) to tune match and tune filter communication signals prior to transmission. The variable matching circuit and the variable harmonic filter each include at least one variable capacitive element (2160 and 2400) that switches ON/OFF depending on whether a low frequency signal or a high frequency signal is being transmitted. Each variable capacitive element includes separate direct current and radio frequency terminals to enable the single PA line-up to change signal modulation and/or RF power levels in addition to frequencies.

50 citations


Authors

Showing all 7673 results

NameH-indexPapersCitations
David Blaauw8775029855
Krishnendu Chakrabarty7999627583
Rajesh Gupta7893624158
Philippe Renaud7777326868
Min Zhao7154724549
Gary L. Miller6330613010
Paul S. Ho6047513444
Ravi Subrahmanyan5935314244
Jing Shi5322210098
A. Alec Talin5231112981
Chi Hou Chan485119504
Lin Shao4838012737
Johan Åkerman483069814
Philip J. Tobin471866502
Alexander A. Demkov473317926
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20211
20203
201910
201826
201779
2016267