Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Process for forming an electrical device

Abstract: The present invention includes a process for forming an electrical device. In one embodiment, the process includes applying a solid patternable film over a substrate and forming a conductive material over the substrate while the solid patternable film overlies the substrate, wherein the conductive material extends at least partially within an opening in the patternable film. In another embodiment, the process includes applying a patterned film over a substrate having a pad and exposing the patterned film and the substrate to energy. The patterned film includes a first region that includes a conductor and a second region that does not have a conductor. The energy of the exposure forms an electrical connection between the conductor and the pad. In yet another embodiment, the process includes mechanically applying a film over a semiconductor device substrate, patterning the film to define a first opening to expose a conductive region within the semiconductor device substrate, forming a first conductive layer within the first opening, and forming a second conductive layer over the first conductive layer.

Frequency synthesis and synchronization for led drivers

Abstract: A PWM generation module generates a PWM data signal used to control a light emitting diode (LED) driver for one or more strings of LEDs of a display device. The PWM data signal is synchronized with the frame boundaries of the video content being displayed. The PWM generation module can configure the PWM data signal such that a new PWM cycle is initiated at the start of each successive frame, and further whereby those PWM cycles that would be prematurely terminated at frame boundaries are instead driven at a constant reference level until the frame boundary. With this configuration, a substantially linear average light intensity can be achieved across frames, thereby reducing or eliminating display distortion that is often present in other PWM cycle synchronization techniques. The PWM generation module can use a self-learning process to make adjustments to the expected number of completeable PWM cycles per frame in response to dynamic changes in the frame rate, PWM frequency, or other related display parameters.

Integrated circuit having a bulk acoustic wave device and a transistor

Abstract: A bulk GaN layer is on a first surface of a substrate, wherein the bulk GaN layer has a GaN transistor region and a bulk acoustic wave (BAW) device region. A source/drain layer is over a first surface of the bulk GaN layer in the GaN transistor region. A gate electrode is formed over the source/drain layer. A first BAW electrode is formed over the first surface of the bulk GaN layer in the BAW device region. An opening is formed in a second surface of the substrate, opposite the first surface of the substrate, which extends through the substrate and exposes a second surface of the bulk GaN layer, opposite the first surface of the bulk GaN layer. A second BAW electrode is formed within the opening over the second surface of the bulk GaN layer.

Laser markable molding compound, method of use and device therefrom

Abstract: An improved laser markable material useful for encapsulation of electronic devices is obtained by adding TiO 2 or TiO 2 +CrO 3 to common plastic encapsulants formed from a mixture of a resin+filler+carbon black+mold release agent. When irradiated by a laser, the originally grey material turns bright gold, providing a high contrast durable mark. The material has excellent marking contrast as well as better stability with time and temperature as compared to prior art laser markable encapsulants. Desirable concentrations, in weight percent of the compound, are 1-5% TiO 2 and 0-3% CrO 3 , with 1-3% TiO 2 and 0.5-2% CrO 3 being preferred. Carbon black is optional but a concentration in the range 0.1-3% by weight is desirable with 0.5-1% preferred. Improved encapsulation and marking methods and improved devices using this material are described.

Scheduling memory access requests using predicted memory timing and state information

Abstract: A data processing system (100) employs an improved arbitration process (600) in selecting pending memory access requests received from the one or more processor cores (11) for servicing by the memory (16). The arbitration process uses memory timing and state information (401) pertaining both to memory access requests (300, 501) already submitted to the memory for servicing and to the pending memory access requests (300, 501) which have not yet been selected for servicing by the memory (16). The memory timing and state information (401) may be predicted memory timing and state information; that is, the component (14) of the data processing system (100) that implements the improved scheduling algorithm (600) may not be able to determine the exact point in time at which a memory controller (15) initiates a memory access for a corresponding memory access request and thus the component (14, 304) maintains information that estimates or otherwise predicts the particular state of the memory (16) at any given time.