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Institution

Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..


Papers
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Journal ArticleDOI
TL;DR: In this paper, the authors presented a fully integrated multistage interleaved synchronous buck dc-dc converter with on-chip filter inductor and capacitor, which achieved 64% efficiency while providing an output current of 200 mA.
Abstract: The design and analysis of a fully integrated multistage interleaved synchronous buck dc-dc converter with on-chip filter inductor and capacitor is presented. The dc-dc converter is designed and fabricated in 0.18 mum SiGe RF BiCMOS process technology and generates 1.5 V-2.0 V programmable output voltage supporting a maximum output current of 200 mA. High switching frequency of 45 MHz, multiphase interleaved operation, and fast hysteretic controller reduce the filter inductor and capacitor sizes by two orders of magnitude compared to state-of-the-art converters and enable a fully integrated converter. The fully integrated interleaved converter does not require off-chip decoupling and filtering and enables direct battery connection for integrated applications. This design is the first reported fully integrated multistage interleaved, zero voltage switching synchronous buck converter with monolithic output filters. The fully integrated buck regulator achieves 64% efficiency while providing an output current of 200 mA.

146 citations

Patent
26 Apr 1993
TL;DR: In this paper, a heat spreader with conductive traces and conductive pads is used to spread heat from a semiconductor die to a substrate, which is then covered by a cavity sealing means.
Abstract: A package (10, 37, 39) capable of spreading heat from a semiconductor die (25). The package (10, 37) includes a heat spreader (11) having a thickness of approximately 0.2 millimeters and a plurality of heat spreader clearance holes (16). The heat spreader (11) is coated with an adhesive material (17) which fills the plurality of heat spreader clearance holes (16). A substrate layer (18) is formed on the adhesive material (17). The substrate layer (18) has conductive traces (20, 24) and conductive pads (21) disposed thereon. A cavity (23) may be present in the package (10, 37, 39) which exposes a portion of the heat spreader (11) and is adapted to receive the semiconductor die (25). The cavity (23) is covered by a cavity sealing means (30, 38).

145 citations

Patent
26 Mar 2007
TL;DR: In this article, a method of managing the power up of a device that has power down state and at least two power up states is presented, which is based on statistical indicators associated with the stored power up time profile.
Abstract: A method of managing the power up of a device that has power down state and at least two power up states. The method includes statistically analyzing the power up time profile of the device. The method also includes determining one or more predetermined statistical indicators associated with the stored power up time profile. The method further includes calculating an anticipated start up time from the statistical indicators. The method also includes at the anticipated start up time changing the device state from the power down state to a predetermined one of the power up states depending on the statistical indicators. The method further includes maintaining the device at predetermined power up states for a predetermined duration. The method also includes returning the device to the power down state if there is no user interaction with the device during the predetermined duration.

144 citations

Proceedings ArticleDOI
25 Sep 2006
TL;DR: The FlexRay protocol as discussed by the authors is reaching maturity quickly with a stable specification available for almost a year and a fully established conformance test in operation, and the main design goals of the Flexray protocol, provides an overview of the most relevant automotive networking protocols with some emphasis on safety-relevant features.
Abstract: The FlexRay protocol is reaching maturity quickly with a stable specification available for almost a year and a fully established conformance test in operation. This paper briefly reviews the main design goals of the FlexRay protocol, provides an overview of the evolution of the most relevant automotive networking protocols with some emphasis on safety-relevant features and finally discusses the most prominent applications.

143 citations

Patent
09 Apr 1993
TL;DR: In this paper, a cooling cover for an RF power amplifier device having a mounting support, a first lead, and a heat generating die mounted on the first lead is presented, which is comprised of a body of a thermally conductive material and having a first surface and a second surface.
Abstract: A cooling cover for an RF power amplifier device having a mounting support, a first lead, and a heat generating die mounted on the first lead. The cooling cover is comprised of a body of a thermally conductive material and having a first surface and a second surface. A layer of thermally conductive and electrical non-conductive material is deposited upon the second surface of the cooling cover. When the cover is coupled to the mounting support, the first surface is in contact with the mounting support and the second surface is in contact with the first lead thereby providing a low resistance heat path between the heat generating die and mounting support.

143 citations


Authors

Showing all 7673 results

NameH-indexPapersCitations
David Blaauw8775029855
Krishnendu Chakrabarty7999627583
Rajesh Gupta7893624158
Philippe Renaud7777326868
Min Zhao7154724549
Gary L. Miller6330613010
Paul S. Ho6047513444
Ravi Subrahmanyan5935314244
Jing Shi5322210098
A. Alec Talin5231112981
Chi Hou Chan485119504
Lin Shao4838012737
Johan Åkerman483069814
Philip J. Tobin471866502
Alexander A. Demkov473317926
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20211
20203
201910
201826
201779
2016267