Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Implant-free high-mobility flatband MOSFET: principles of operation

Abstract: Principles of operation of implant-free enhancement-mode MOSFETs (flatband MOSFET) are discussed. Epitaxial-layer structures designed for use in implant-free enhancement-mode devices and employing a high-kappa dielectric (kappacong20) and a strained InGaAs channel layer with a thickness of 10 nm have been manufactured on GaAs substrate. Proceeding from measured electron mobility mu as a function of the sheet-carrier concentration, enhancement-mode design considerations, saturation current IDss, and mobility requirements are discussed using two-dimensional device simulations. For the flatband MOSFET to compete successfully with other device designs, certain minimum channel mobilities are required. For RF applications, mu should exceed 5000 cm2/Vs while high-performance MOSFETs for digital applications may require even higher mobility for optimum operation. Finally, measured data of first 1-mum-GaAs-flatband enhancement-mode MOSFETs are presented; the saturation velocity of the InGaAs channel layer is derived; and measured IDss data are compared to the results obtained by simulations

MRAM cell requiring low switching field

Abstract: A low switching field multi-state, multi-layer magnetic memory cell (10) including two layers of magnetic material (23, 24) stacked in parallel, overlying relationship and separated by a layer of non-magnetic material (12) so as to form a portion of a multi-layer magnetic memory cell. The two layers of magnetic material being formed so that the width is less than the length and less than a width of magnetic domain walls within the two layers of magnetic material, setting a shape anisotropy easy axis along the length thereof. At least one of the two layers of magnetic material having a magnetic anisotropy generally parallel to the width of the layers of magnetic material.

Motor controller, integrated circuit, and method of controlling a motor

Abstract: A motor controller includes an input terminal (22), a frequency selective network, a first controller, and a second controller. The input terminal is adapted to be coupled to a drive phase of a motor (16) for receiving a signal (24). The frequency selective network (18) has an input coupled to the input terminal (22) and an output for providing a first signal representative of the back EMF signal within a frequency range corresponding to a predetermined harmonic frequency above a primary frequency thereof. The first controller (20) has an input coupled to the output of the frequency selective network (18) and an output for providing a second signal representative of a position or a velocity of a rotor of the motor (16). The second controller (10) has an input coupled to the output of the first controller (20) and an output for providing a third signal. The third signal indicates how the motor (16) is to be driven.

Method of making ohmic contacts to a complementary semiconductor device

Abstract: The present invention encompasses a method for providing the same ohmic material contact (120, 122, 124) to N-type and P-type regions (70, 80) of a III-V semiconductor device. Specifically, an N-type region (70) extending through a semiconductor structure is formed. Additionally, a P-type region (80) extending through the substrate is formed. The P-type region (80) may be heavily doped with P-type impurities (81). A first ohmic region (117) is formed, contacting the N-type region (70). The first ohmic region may comprise an ohmic material including metal and an N-type dopant. A second ohmic region (119) is formed, contacting the P-type region (80, 81). The second ohmic region comprises the same ohmic material as the first ohmic region. One ohmic material that may be used is nickel-germanium-tungsten.

Apparatus, method, and program for outputting present position

Abstract: An apparatus, method and program for outputting a present position that enables a user to be located with further accuracy even in a multi-level area. A control unit periodically sends a reference atmospheric pressure information obtaining request to a base station and obtains reference atmospheric pressure information including the atmospheric pressure and altitude of the base station from the base station and stores the obtained information in a data storage. The control unit uses the measurement value of atmospheric pressure obtained from a pressure sensor and an altitude calculation equation including the reference atmospheric pressure information to periodically calculate and record in the data storage the altitude of the present position. When an emergency button is pushed, the control unit issues to an emergency contact an emergency notification including the present altitude or the altitude recorded in the data storage.