Institution
Freescale Semiconductor
About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..
Topics: Layer (electronics), Signal, Transistor, Integrated circuit, Amplifier
Papers published on a yearly basis
Papers
More filters
•
08 Feb 2010TL;DR: In this paper, a microcontroller-based method and apparatus are described for generating one or more amplitude and frequency selectable low frequency pilot tone signals (PT) that are injected into an embedded MEMS sensor ( 110 ) and mixed signal ASIC ( 120 ) and then recovered at the microcontroller ( 140 ) to compute or measure various gyro parameters during operational use of the device with no down time or interference with normal operations.
Abstract: A microcontroller-based method and apparatus are described for generating one or more amplitude and frequency selectable low frequency pilot tone signals (PT) that are injected into an embedded MEMS sensor ( 110 ) and mixed signal ASIC ( 120 ) and then recovered at the microcontroller ( 140 ) to compute or measure various gyro parameters during operational use of the device with no down time or interference with normal operations.
42 citations
•
23 Feb 1996TL;DR: In this paper, an anti-reflective layer of silicon-rich silicon nitride was used for photoresist pattern notching over reflective materials on a semiconductor substrate, which was then photolithographically patterned to form an integrated circuit pattern.
Abstract: Reflective notching of a photoresist pattern (20), generated over reflective materials on a semiconductor substrate (12), is minimized by using an anti-reflective layer (20) of silicon-rich silicon nitride. The layer of silicon-rich silicon nitride is formed over the reflective materials and a layer of photoresist is then formed over the silicon-rich silicon nitride. The photoresist layer is then photolithographically patterned to form an integrated circuit pattern (20). The silicon-rich silicon nitride layer has an absorptive index of greater than 0.25, which allows it to be used as an anti-reflective layer with photolithographic patterning systems having ultraviolet and deep ultraviolet exposure wavelengths.
42 citations
•
16 Oct 2003TL;DR: In this article, a diffusion barrier material is introduced into the first dielectric layer, and then a second layer is formed over the first layer after the introducing, and the diffusion barrier is removed after that.
Abstract: A method for forming a dielectric is disclosed. The method comprises forming a first dielectric layer over semiconductor material. A diffusion barrier material is introduced into the first dielectric layer. Lastly, a second dielectric layer is formed over the first dielectric layer after the introducing.
42 citations
•
22 Mar 1999TL;DR: In this article, a method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12), forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface.
Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
42 citations
•
26 Jan 2005TL;DR: In this article, the SISD structure has a composition gradient where the percentage of the second element varies from the upper surface of the source/drain structure to a lower surface of SISd structure.
Abstract: A semiconductor fabrication process has recessed stress-inducing source/drain (SISD) structures that are formed using a multiple phase formation process. The SISD structures are semiconductor structures having a lattice constant that differs from a lattice constant of the semiconductor substrate in which the source/drain structures are recessed. The SISD structures preferably include semiconductor compound having a first element (e.g., silicon) and a second element (e.g., germanium or carbon). The SISD structure has a composition gradient wherein the percentage of the second element varies from the upper surface of the source/drain structure to a lower surface of the SISD structure. The SISD structure may include a first layer with a first composition of the semiconductor compound underlying a second layer with a second composition of the semiconductor compound. The second layer may include an impurity and have a higher percentage of the second element that the first layer.
42 citations
Authors
Showing all 7673 results
Name | H-index | Papers | Citations |
---|---|---|---|
David Blaauw | 87 | 750 | 29855 |
Krishnendu Chakrabarty | 79 | 996 | 27583 |
Rajesh Gupta | 78 | 936 | 24158 |
Philippe Renaud | 77 | 773 | 26868 |
Min Zhao | 71 | 547 | 24549 |
Gary L. Miller | 63 | 306 | 13010 |
Paul S. Ho | 60 | 475 | 13444 |
Ravi Subrahmanyan | 59 | 353 | 14244 |
Jing Shi | 53 | 222 | 10098 |
A. Alec Talin | 52 | 311 | 12981 |
Chi Hou Chan | 48 | 511 | 9504 |
Lin Shao | 48 | 380 | 12737 |
Johan Åkerman | 48 | 306 | 9814 |
Philip J. Tobin | 47 | 186 | 6502 |
Alexander A. Demkov | 47 | 331 | 7926 |