Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Split channel receiver with very low second order intermodulation

Abstract: A high performance radio frequency receiver includes an isolated transconductance amplifier with large binary and stepped gain control range, controlled impedance, and enhanced blocker immunity, for amplifying and converting a radio frequency signal to multiple electrically isolated currents; a pulse generator for generating in-phase and quadrature pulses; a crossover correction circuit and pulse shaper for controlling a crossover threshold of the pulses and interaction between in-phase and quadrature mixers; and a double balanced mixer for combining the RF signal with the pulses to generate an intermediate frequency or baseband zero intermediate frequency current-mode signal. The intermediate frequency signal and second order harmonics may be filtered with a high frequency low pass filter and a current injected complex direct-coupled filter. IIP2 calibration of the in-phase and quadrature channels may be optimized using the isolated transconductance amplifier.

Low power, high resolution timing generator for ultra-wide bandwidth communication systems

Abstract: A data communication method is provided, comprising: processing high-speed digital data for communication to produce processed data; generating short impulse wavelets; constructing a digitally modulated ultra wideband signal from the short impulse wavelets in response to bits of the processed data, wherein the digitally modulated ultra wideband signal comprises a series of the short impulse wavelets, and the value of each bit of the processed data is digitally modulated onto the shape of at least one of the short impulse wavelets of the series, to produce a series of digitally shape modulated impulse wavelets; and transmitting the digitally modulated ultra wideband signal, including the series of digitally shape modulated impulse wavelets, via an antenna.

SP-HV: A Scalable Surface-Potential-Based Compact Model for LDMOS Transistors

Abstract: This paper introduces a scalable compact model of lateral double-diffused MOS (LDMOS) transistors. The new model, i.e., the Surface-Potential-based High-Voltage MOS (SP-HV), is constructed from a surface-potential-based bulk MOS field-effect transistor model, i.e., PSP, and a nonlinear resistor model, i.e., R3. Extensions are made to both PSP and R3 for improved modeling of LDMOS devices, and one internal node is introduced to connect the two component models. The new model is validated by comparison to technology computer-aided design (TCAD) simulations and experimental data. Quasi-saturation, self-heating, impact ionization current in the drift region, and complex behavior of transcapacitances are accurately modeled by SP-HV.

Packaging process to create wettable lead flank during board assembly

Abstract: A method and apparatus are described for fabricating a low-pin-count chip package (701) including a die pad (706) for receiving an integrated circuit device and a plurality of connection leads (702) having recessed lead ends (704) at the outer peripheral region of each contact lead. After forming the package body (202) over the integrated circuit device, unplated portions (104) of the exposed bottom surface of the selectively plated lead frame are partially etched to form recessed lead ends (302) at the outer peripheral region of each contact lead, and the recessed lead ends are subsequently re-plated (402) to provide wettable recessed lead ends at the outer peripheral region of each contact lead.

Methods and apparatus for RF shielding in vertically-integrated semiconductor devices

Abstract: A patterned ground shield (PGS) (130) in a vertically-integrated structure includes a patterned conductor (e.g., a metallic layer) provided between a first substrate (110) having a first semiconductor device (1120 formed therein and a second substrate (120) having a second device (122) formed therein. A bonding layer (140) is used to bond the vertically-integrated die and/or wafers. The PGS may be formed on a surface (e.g., the backside) of the second (topmost) substrate, or may be formed over the first semiconductor device—for example, on a dielectric layer formed over the first semiconductor device. The PGS may consist of parallel stripes in various patterns, or may be spiral-shaped, lattice-shaped, or the like.