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Institution

Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..


Papers
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Patent
11 Sep 1996
TL;DR: In this paper, a dielectric paste is used in the fabrication of multilayered ceramic modules to create circuit elements, which is a multiphase material in which at least one phase is an alkaline earth metal, transition metal silicate.
Abstract: A dielectric paste material may be used in the fabrication of multilayered ceramic modules to create circuit elements. The dielectric paste is a multiphase material in which at least one phase is an alkaline earth metal, transition metal silicate. This yields a dielectric paste with extremely good K & Q values suitable for high frequency applications which significantly reduce manufacturing costs of modules.

38 citations

Patent
20 Jul 2006
TL;DR: In this paper, the authors propose a compensation circuit for process, voltage and temperature variations in an integrated circuit that includes functional modules, which includes a signal generator, a first code generator and a second code generator, and a mapping module.
Abstract: A compensation circuit and a method that compensates for process, voltage and temperature (PVT) variations in an integrated circuit that includes functional modules. The compensation circuit includes a signal generator, a first code generator, a second code generator, and a mapping module. The signal generator generates a first signal and a second signal depending on aligned process corner, voltage and temperature variations and skewed process corner variations respectively. The first code generator receives the first signal, and generates a first calibration code. The second code generator receives the second signal, and generates a second calibration code. The mapping module provides the first and second calibration codes for compensating for the aligned process corner, voltage and temperature variations and the skewed process corner variations associated with the functional modules respectively.

38 citations

Patent
02 Feb 1998
TL;DR: A pipelined dual port integrated circuit memory (20) includes an array (30) of static random access memory (SRAM) cells, where substantially simultaneous requests for access are serviced sequentially within a single cycle of a clock signal of a data processor that is accessing the memory as mentioned in this paper.
Abstract: A pipelined dual port integrated circuit memory (20) includes an array (30) of static random access memory (SRAM) cells. A control circuit (32) controls access to the memory cells, where substantially simultaneous requests for access are serviced sequentially within a single cycle of a clock signal of a data processor that is accessing the memory (20). An address collision detector (110) uses both a differential amplifier (360) included within a D-flip-flop circuit (114) and a reference voltage provided by a reference voltage circuit (365) to compare addresses provided to the two ports, and generates a match signal that is used for determining which of the two ports are serviced first, independent of which port is read from, or written to. Because dual port functionality is obtained using a single port SRAM array (30), the memory (20) may be manufactured using relatively less integrated circuit surface area, and therefore at a lower cost.

38 citations

Patent
30 Jan 2007
TL;DR: In this article, a method of driving an LED includes determining an operational parameter of the LED, determining a driving signal parameter for the LED and generating a periodic driving signal for driving the LED.
Abstract: A method of driving an LED includes determining an operational parameter of the LED, determining a driving signal parameter for the LED, and generating a periodic driving signal for driving the LED. The generated periodic driving signal has a duty cycle that depends on the determined driving signal parameter and the determined operational parameter of the LED.

38 citations

Patent
20 Feb 2002
TL;DR: In this article, a distributed amplifier (40) comprising an input transmission line (48), an output transmission line and N amplifier sections (42,44,46), and N biasing sources (82) was configured to provide N independent biasing voltages for each transistor (52) of the N amplifier section (42.44, 46) for active operation as such that when a first independent voltage of a first transistor was modified the first transistor is configured for a non-active operation and an output power of the distributed amplifier was reduced without a substantial degradation in an efficiency of a distributed
Abstract: A distributed amplifier (40) comprising an input transmission line (48), an output transmission line (50) and N amplifier sections (42,44,46), and N biasing sources (82) configured to provide N independent biasing voltages for each transistor (52) of the N amplifier sections (42,44,46) for active operation as such that when a first independent biasing voltage of a first transistor is modified the first transistor is configured for a non-active operation and an output power of the distributed amplifier (40) is reduced without a substantial degradation in an efficiency of the distributed amplifier (40).

38 citations


Authors

Showing all 7673 results

NameH-indexPapersCitations
David Blaauw8775029855
Krishnendu Chakrabarty7999627583
Rajesh Gupta7893624158
Philippe Renaud7777326868
Min Zhao7154724549
Gary L. Miller6330613010
Paul S. Ho6047513444
Ravi Subrahmanyan5935314244
Jing Shi5322210098
A. Alec Talin5231112981
Chi Hou Chan485119504
Lin Shao4838012737
Johan Åkerman483069814
Philip J. Tobin471866502
Alexander A. Demkov473317926
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20211
20203
201910
201826
201779
2016267