Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Improving computer architecture simulation methodology by adding statistical rigor

Abstract: Due to cost, time, and flexibility constraints, computer architects use simulators to explore the design space when developing new processors and to evaluate the performance of potential enhancements. However, despite this dependence on simulators, statistically rigorous simulation methodologies are typically not used in computer architecture research. A formal methodology can provide a sound basis for drawing conclusions gathered from simulation results by adding statistical rigor and, consequently, can increase the architect's confidence in the simulation results. This paper demonstrates the application of a rigorous statistical technique to the setup and analysis phases of the simulation process. Specifically, we apply a Plackett and Burman design to: 1) identify key processor parameters, 2) classify benchmarks based on how they affect the processor, and 3) analyze the effect of processor enhancements. Our results showed that, out of the 41 user-configurable parameters in SimpleScalar, only 10 had a significant effect on the execution time. Of those 10, the number of reorder buffer entries and the L2 cache latency were the two most significant ones, by far. Our results also showed that instruction precomputation - a value reuse-like microarchitectural technique - primarily improves the processor's performance by relieving integer ALU contention.

Voltage multiplier with improved efficiency

Abstract: A multi-stage voltage multiplication circuit and methodology are provided which use a multi-stage charge pump boosting circuit (210) and two-stage pass gate circuit (220) having complementary power switches (M6, M9, M7, M10) to efficiently develop an output voltage (VOUT) that is higher than the input supply voltage (VDD). By using a two-stage complementary switch to connect boosted clock signals (P1, P2) from a charge pump (210) to the multiplier output (VOUT), return current from the storage capacitor (COUT) to the pumping capacitor (C1, C2) is blocked, thereby increasing power transfer efficiency, even at high clock frequencies. In addition, a boosted auxiliary voltage is generated by an additional boosting stage (230) and applied to the PMOS wells of the pass gate circuit (220), thereby preventing latch-up and backflow.

Integrated passive device and method with low cost substrate

Abstract: According to one aspect of the present invention, a method of forming a microelectronic assembly, such as an integrated passive device (72), is provided. An insulating initial dielectric layer (32) comprising charge trapping films of, for example, aluminum nitride or silicon nitride or silicon oxide or a combination thereof, is formed over a silicon substrate (20). At least one passive electronic component (62) is formed over the initial dielectric layer (32). In an embodiment where silicon nitride or oxide is used in the initial dielectric layer (32) in contact with the silicon substrate (20), it is desirable to pre-treat the silicon surface (22) by exposing it to a surface damage causing treatment (e.g. an argon plasma) prior to depositing the initial dielectric layer, to assist in providing carrier depletion near the silicon surface around zero bias. RF loss in integrated passive devices using such silicon substrates is equal or lower than that obtained with GaAs substrates.

Non-volatile memory and logic circuit process integration

Abstract: A method of making a logic transistor in a logic region of a substrate and a non-volatile memory cell in an NVM region of the substrate includes forming a gate dielectric layer on the substrate. A first polysilicon layer is formed on the gate dielectric. The first polysilicon layer is formed over the NVM region and removing the first polysilicon layer over the logic region. A dielectric layer is formed over the NVM region including the first polysilicon layer and over the logic region. A protective layer is formed over the dielectric layer. The dielectric layer and the protective layer are removed from the logic region to leave a remaining portion of the dielectric layer and a remaining portion of the protective layer over the NVM region. A high-k dielectric layer is formed over the logic region and the remaining portion of the protective layer. A first metal layer is formed over the high K dielectric layer. The first metal layer, the high K dielectric, and the remaining portion of the protective layer are removed over the NVM region to leave a remaining portion of the first metal layer and a remaining portion of the high K dielectric layer over the logic region. A conductive layer is deposited over the remaining portion of the dielectric layer and over the first metal layer. The NVM cell and the logic transistor are formed and this includes patterning the conductive layer.

Flipchip qfn package and method therefore

Abstract: A semiconductor device (10) includes a first leadframe (18) having a perimeter (20) that defines a cavity (22) and leads (14) extending inwardly from the perimeter, and a second leadframe (32) having top and bottom surfaces and a die paddle surrounding a die receiving area (36). An integrated circuit (12) is placed within the die receiving area of the second leadframe. The IC has bonding pads (44) located on a peripheral portion of its top surface. The second leadframe and the IC are in facing relation with the first leadframe such that the leads of the first leadframe are electrically connected to respective ones of the bonding pads. A mold compound (50) is injected between the first and second leadframes and covers the second leadframe top surface and a central area of the first surface of the IC. At least the bottom surfaces of the leads are exposed.