Institution
Freescale Semiconductor
About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..
Topics: Layer (electronics), Signal, Transistor, Integrated circuit, Voltage
Papers published on a yearly basis
Papers
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16 Apr 2004TL;DR: In this paper, a proof mass for a MEMS device is provided, which consists of a base (13) comprising a semiconductor material, and at least one appendage (15) adjoined to the base by way of a stem.
Abstract: A proof mass (11) for a MEMS device is provided herein. The proof mass comprises a base (13) comprising a semiconductor material, and at least one appendage (15) adjoined to said base by way of a stem (21). The appendage (15) comprises a metal (17) or other such material that may be disposed on a semiconductor material (19). The metal increases the total mass of the proof mass (11) as compared to a proof mass of similar dimensions made solely from semiconductor materials, without increasing the size of the proof mass. At the same time, the attachment of the appendage (15) by way of a stem (21) prevents stresses arising from CTE differentials in the appendage from being transmitted to the base, where they could contribute to temperature errors.
37 citations
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26 Feb 2004TL;DR: In this article, a memory array (32, 33, 42) is multiple-mapped in the physical memory map (70) of processor and the address bits associated with the multiple mapping are used to directly control timing parameters of the memory arrays.
Abstract: Memory management in a data processing system (10) is achieved by using one or more timing bits (54) to specify a timing parameter of a memory (18, 19, 34). To implement this in some embodiments of the present invention, a memory array (32, 33, 42) is multiple-mapped in the physical memory map (70) of processor (12) and the address bits (54) associated with the multiple-mapping are used to directly control timing parameters of the memory arrays (32, 33, 42). This allows for flexible timing specifications to be derived quickly on an access by access basis without requiring any additional control storage overhead.
37 citations
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01 Feb 2001TL;DR: In this paper, the authors propose a method for operating a communication bus where the method includes detecting a start of frame symbol on the communication bus, determining a length of the start of the symbol, determining the length of an adjusted synchronization field, concluding that the start symbol is valid and concluding that synchronization field is valid.
Abstract: Embodiments of the present invention related generally to communication systems. One embodiment contemplates a method for operating a communication bus where the method includes detecting a start of frame symbol on the communication bus; determining a length of the start of frame symbol; detecting a start of a synchronization field on the communication bus; determining a length of an adjusted synchronization field; determining if the length of the adjusted synchronization field is less than the length of the start of frame symbol; and if the length of the adjusted synchronization field is less than the length of the start of frame symbol, concluding that the start of frame symbol is valid and concluding that the synchronization field is valid. Embodiments of the invention may be used, for example, with the Local Interconnect Network (LIN) protocol.
37 citations
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23 May 1997TL;DR: In this article, a buffered substrate structure with a supporting substrate of GaAs is proposed for fabricating submicron HFETs, which supports the operation of p and n type transistors equally well.
Abstract: A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300° C., a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200° C., a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400° C., and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.
37 citations
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01 Mar 2006TL;DR: In this article, the uplink access method in a mobile subscriber station of a broadband wireless access communication system prioritizes uplink bandwidth allocation according to QoS types of requested service.
Abstract: An uplink access method in a mobile subscriber station of a broadband wireless access communication system prioritizes uplink bandwidth allocation according to QoS types of requested service. A scheduling priority is assigned to each type of service flow to guarantee the highest data rate for the high QoS service flows, and then the uplink data grants are scheduled based on this assigned priority. By assigning a priority to each connection based on the service type flow, the higher data rate connections will always have the opportunity to transmit uplink data to fulfill the high data rate QoS requirement, and fragmentation will occur only on the last lowest priority Connection ID (CID) based on the size of the last remaining data grant. The uplink access method further prevents the high priority service from stealing bandwidth from data grants intended for lower priority services by identifying when the data grant is mismatched from the amount requested by the lower level services.
37 citations
Authors
Showing all 7673 results
Name | H-index | Papers | Citations |
---|---|---|---|
David Blaauw | 87 | 750 | 29855 |
Krishnendu Chakrabarty | 79 | 996 | 27583 |
Rajesh Gupta | 78 | 936 | 24158 |
Philippe Renaud | 77 | 773 | 26868 |
Min Zhao | 71 | 547 | 24549 |
Gary L. Miller | 63 | 306 | 13010 |
Paul S. Ho | 60 | 475 | 13444 |
Ravi Subrahmanyan | 59 | 353 | 14244 |
Jing Shi | 53 | 222 | 10098 |
A. Alec Talin | 52 | 311 | 12981 |
Chi Hou Chan | 48 | 511 | 9504 |
Lin Shao | 48 | 380 | 12737 |
Johan Åkerman | 48 | 306 | 9814 |
Philip J. Tobin | 47 | 186 | 6502 |
Alexander A. Demkov | 47 | 331 | 7926 |