Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Silicided nonvolatile memory and method of making same

Abstract: A memory device is formed on a semiconductor substrate. A select gate electrode and a control gate electrode are formed adjacent to one another. One of either the select gate electrode or the control gate electrodes is recessed with respect to the other. The recess allows for a manufacturable process with which to form silicided surfaces on both the select gate electrode and the control gate electrode.

Combined experimental and theoretical study of thin hafnia films

Abstract: We present a joint experimental and theoretical study of ultrathin hafnia films grown on Si (001) by atomic layer deposition for applications as a gate dielectric of a field-effect transistor. The structural analysis by means of high-resolution transmission electron microscopy, electron diffraction, and x-ray diffractometry indicates films with thickness of 4 nm or less to be polycrystalline, predominantly monoclinic and textured, with the texture axis being the normal to the $(21\overline{1})$, $(11\overline{2})$, and their equivalent planes. Films with thickness around 10 nm consist of a mixture of monoclinic and tetragonal phases more or less randomly oriented. Films thicker than 25 nm are purely monoclinic with $(\overline{1}11)$ and (111) textures. Using density-functional theory we investigate surface energies of monoclinic and tetragonal hafnia films in search for thermodynamic means of controlling the film microstructure. We report the atomic and electronic structures of these films including the surface energy, work function, and electron affinity.

Techniques for reducing joint detection complexity in a channel-coded multiple-input multiple-output communication system

Abstract: A technique for joint detection of channel-coded signals in a multiple-input multiple-output system includes detecting, when a decoded signal associated with a first symbol stream passes a cyclic redundancy check, channel-coded signals in the first symbol stream and a second symbol stream using minimum mean squared error with ordered successive interference cancellation (MMSE-OSIC) based detection. When the decoded signal associated with the first symbol stream fails the cyclic redundancy check, the channel-coded signals in the first and second symbol streams are detected using neighbor search algorithm (NSA) based detection.

Split gate memory cell in a FinFET

Abstract: A memory cell is implemented using a semiconductor fin (105, 107) in which the channel region is along a sidewall of the fin between source and drains regions. One portion of the channel region has a select gate (731) adjacent to it and another other portion has the control gate (1001) adjacent to it with a charge storage structure there between. In some embodiments, independent control gate structures are located adjacent opposite sidewalls of the fin so as to implement two memory cells.