scispace - formally typeset
Search or ask a question
Institution

Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..


Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, a scaling behavior for the electronic properties that is the analog of the scaling behavior found earlier for the vibrational properties was found for the optical transitions in the alloys, which is not predicted by electronic structure calculations within the virtual crystal approximation.
Abstract: The ${E}_{0}$, ${E}_{0}+{\ensuremath{\Delta}}_{0}$, ${E}_{1}$, ${E}_{1}+{\ensuremath{\Delta}}_{1}$, ${E}_{0}^{\ensuremath{'}}$, and ${E}_{2}$ optical transitions have been measured in ${\mathrm{Ge}}_{1\ensuremath{-}y}{\mathrm{Sn}}_{y}$ alloys $(yl0.2)$ using spectroscopic ellipsometry and photoreflectance. The results indicate a strong nonlinearity (bowing) in the compositional dependence of these quantities. Such behavior is not predicted by electronic structure calculations within the virtual crystal approximation. The bowing parameters for ${\mathrm{Ge}}_{1\ensuremath{-}y}{\mathrm{Sn}}_{y}$ alloys show an intriguing correlation with the corresponding bowing parameters in the ${\mathrm{Ge}}_{1\ensuremath{-}x}{\mathrm{Si}}_{x}$ system, suggesting a scaling behavior for the electronic properties that is the analog of the scaling behavior found earlier for the vibrational properties. A direct consequence of this scaling behavior is a significant reduction (relative to prior theoretical estimates within the virtual crystal approximation) of the concentration ${y}_{c}$ for a crossover from an indirect- to a direct-gap system.

299 citations

Patent
17 May 2000
TL;DR: In this article, an improved and novel MRAM device with magnetic memory elements and circuitry for controlling magnetic memory element is provided, where the circuitry is fabricated under the CMOS process.
Abstract: An improved and novel MRAM device with magnetic memory elements and circuitry for controlling magnetic memory elements is provided. The circuitry, for example, transistor (12a) having a gate (17a), a drain (18) and a source (16a) is integrated on a substrate (11) and coupled to a magnetic memory element (43) on the circuitry through a plug conductor (19a) and a conductor line (45). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44). Digit line (29) and bit line (48) are placed under and on top of magnetic memory element (43), respectively, and enabled to access magnetic memory element (43). These lines are enclosed by a high permeability layer (31, 56, 58) excluding a surface facing magnetic memory element (43), which shields and focuses a magnetic field toward magnetic memory element (43).

294 citations

PatentDOI
28 Mar 2001
TL;DR: In this paper, a lithographic template is used in the fabrication of a semiconductor device for affecting a pattern in the device by positioning the template in close proximity to the semiconductor devices having a radiation sensitive material formed thereon and applying a pressure to cause the radiation-sensitive material to flow into the relief image present on the template.
Abstract: The lithographic template is formed having a substrate, an optional etch stop layer formed on a surface of the substrate, and a patterning layer formed on a surface of the etch stop layer. The template is used in the fabrication of a semiconductor device for affecting a pattern in the device by positioning the template in close proximity to the semiconductor device having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template is then removed to complete fabrication of the semiconductor device.

275 citations

Journal ArticleDOI
TL;DR: Based on the models employed here, proactive management techniques like software rejuvenation triggered by actual measurements can be built and how the exploitation of the seasonal variation can help in adequately predicting the future resource usage is shown.
Abstract: Several recent studies have reported & examined the phenomenon that long-running software systems show an increasing failure rate and/or a progressive degradation of their performance. Causes of this phenomenon, which has been referred to as "software aging", are the accumulation of internal error conditions, and the depletion of operating system resources. A proactive technique called "software rejuvenation" has been proposed as a way to counteract software aging. It involves occasionally terminating the software application, cleaning its internal state and/or its environment, and then restarting it. Due to the costs incurred by software rejuvenation, an important question is when to schedule this action. While periodic rejuvenation at constant time intervals is straightforward to implement, it may not yield the best results. The rate at which software ages is usually not constant, but it depends on the time-varying system workload. Software rejuvenation should therefore be planned & initiated in the face of the actual system behavior. This requires the measurement, analysis, and prediction of system resource usage. In this paper, we study the development of resource usage in a web server while subjecting it to an artificial workload. We first collect data on several system resource usage & activity parameters. Non-parametric statistical methods are then applied toward detecting & estimating trends in the data sets. Finally, we fit time series models to the data collected. Unlike the models used previously in the research on software aging, these time series models allow for seasonal patterns, and we show how the exploitation of the seasonal variation can help in adequately predicting the future resource usage. Based on the models employed here, proactive management techniques like software rejuvenation triggered by actual measurements can be built

269 citations

Journal ArticleDOI
TL;DR: The feasibility of integrating antennas and required circuits to form wireless interconnects in foundry digital CMOS technologies has been demonstrated and the key challenges including the effects of metal structures associated with integrated circuits, heat removal, packaging, and interaction between transmitted and received signals, and nearby circuits appear to be manageable.
Abstract: The feasibility of integrating antennas and required circuits to form wireless interconnects in foundry digital CMOS technologies has been demonstrated The key challenges including the effects of metal structures associated with integrated circuits, heat removal, packaging, and interaction between transmitted and received signals, and nearby circuits appear to be manageable This technology can potentially be applied for implementation of a true single-chip radio for general purpose communication, on-chip and inter-chip data communication systems, RFID tags, RF sensors/radars, and others

264 citations


Authors

Showing all 7673 results

NameH-indexPapersCitations
David Blaauw8775029855
Krishnendu Chakrabarty7999627583
Rajesh Gupta7893624158
Philippe Renaud7777326868
Min Zhao7154724549
Gary L. Miller6330613010
Paul S. Ho6047513444
Ravi Subrahmanyan5935314244
Jing Shi5322210098
A. Alec Talin5231112981
Chi Hou Chan485119504
Lin Shao4838012737
Johan Åkerman483069814
Philip J. Tobin471866502
Alexander A. Demkov473317926
Network Information
Related Institutions (5)
STMicroelectronics
29.5K papers, 300.7K citations

92% related

Texas Instruments
39.2K papers, 751.8K citations

89% related

Intel
68.8K papers, 1.6M citations

87% related

Motorola
38.2K papers, 968.7K citations

86% related

Samsung
163.6K papers, 2M citations

83% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20211
20203
201910
201826
201779
2016267