Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Surface-mount device package having an integral passive component

Abstract: The surface-mount device package comprises a pad located on a face of the surface-mount device, a solder bump bonded to the pad, and a terminal spaced radially apart from the pad. A terminal surrounds the pad in at least one common plane that bisects the pad and the terminal. An electrically resistive volume intervenes between the pad and the terminal. The pad is electrically coupled to the terminal through the resistive volume. The terminal, the pad, and the electrically resistive volume cooperate to form a passive component associated with at least one device interconnection. The passive component preferable comprises an integral resistor. The integral resistor serves to eliminate or at least substantially reduce electrical resonances and reflections that may otherwise degrade the signal integrity.

Touch sensor panel using regional and local electrodes to increase number of sense locations

Abstract: An input sensor for an electronic device (100) which includes a touch sensor panel (104), multiple electrodes and a sensor circuit. The electrodes include multiple regional electrodes and multiple local electrodes. Each regional electrode covers a corresponding region of the touch sensor panel and each local electrode includes multiple pads including one pad located within each of the regional electrodes. The electrodes are distributed so that a touch anywhere across the touch sensor panel is detected by at least one regional electrode and at least one local electrode. A sensor circuit determines a value for each of the electrodes indicating relative change, and compares relative values of the electrodes to identify a location of a touch of the touch sensor panel. The regional electrodes are used to determine a region of a touch and the local electrodes are used to determine a more specific touch location within the determined region.

Rotational vibration gyroscope

Abstract: A rotor affixed to a central mounting post by helical springs for oscillatory rotary movement about the post. The post defining a Z axis and the sensing capacitors adjacent the rotor defining X and Y axes. The rotor, helical springs and post being formed of polysilicon in a single emiconductor process step.

Apparatus and method for optimizing performance of a cache memory in a data processing system

Abstract: A circuit for allowing greater user control over a cache memory is implemented in a data processor (20). Cache control instructions have been implemented to perform touch load, flush, and allocate operations in data cache (54) of data cache unit (24). The control instructions are decoded by both instruction cache unit (26) and sequencer (34) to provide necessary control and address information to load/store unit (28). Load/store unit (28) sequences execution of each of the instructions, and provides necessary control and address information to data cache unit (24) at an appropriate point in time. Cache control logic (60) subsequently processes both the address and control information to provide external signals which are necessary to execute each of the cache control instructions. Additionally, cache control logic (60) provides an external transfer code signal which allows a user to know when a cache transaction is performed.

Method for forming a microwave field effect transistor with high operating voltage

Abstract: A microwave field effect transistor (10) has a high conductivity gate (44) overlying a double heterojunction structure (14, 18, 22) that has an undoped channel layer (18). The heterojunction structure overlies a substrate (12). A recess layer that is a not intentionally doped (NID) layer (24) overlies the heterojunction structure and is formed with a predetermined thickness that minimizes impact ionization effects at an interface of a drain contact of source/drain ohmic contacts (30) and permits significantly higher voltage operation than previous step gate transistors. Another recess layer (26) is used to define a gate dimension. A Schottky gate opening (42) is formed within a step gate opening (40) to create a step gate structure. A channel layer (18) material of InxGa1−xAs is used to provide a region of electron confinement with improved transport characteristics that result in higher frequency of operation, higher power density and improved power-added efficiency.