Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Method for forming a semiconductor device having a strained channel and a heterojunction source/drain

Abstract: A semiconductor device (10) is formed by positioning a gate (22) overlying a semiconductor layer (16) of preferably silicon. A semiconductor material (26) of, for example only, SiGe or Ge, is formed adjacent the gate over the semiconductor layer and over source/drain regions. A thermal process diffuses the stressor material into the semiconductor layer. Lateral diffusion occurs to cause the formation of a strained channel (17) in which a stressor material layer (30) is immediately adjacent the strained channel. Extension implants create source and drain implants from a first portion of the stressor material layer. A second portion of the stressor material layer remains in the channel between the strained channel and the source and drain implants. A heterojunction is therefore formed in the strained channel. In another form, oxidation of the stressor material occurs rather than extension implants to form the strained channel.

Semiconductor device conductive bump and interconnect barrier

Abstract: An interconnect overlies a semiconductor device substrate ( 10 ). In one embodiment, a conductive barrier layer overlies a portion of the interconnect, a passivation layer ( 92 ) overlies the conductive barrier layer and the passivation layer ( 92 ) has an opening that exposes portions of the conductive barrier layer ( 82 ). In an alternate embodiment a passivation layer ( 22 ) overlies the interconnect, the passivation layer ( 22 ) has an opening ( 24 ) that exposes the interconnect and a conductive barrier layer ( 32 ) overlies the interconnect within the opening ( 24 ).

Process for disengaging semiconductor die from an adhesive film

Abstract: An apparatus and method for separating a semiconductor die (303) from an adhesive tape (32) are disclosed. The apparatus includes a blade (34) mechanically coupled to a blade holder (36), wherein the blade (34) is inclined relative to the primary surface of the semiconductor die (303). The method further comprises lifting the semiconductor die (303) while it is attached to the adhesive tape (32) to assist disengagement. The blade (34) facilitates peeling of the semiconductor die (303) from the adhesive tape (32) while distributing stress exerted on the semiconductor die (303) over a larger surface area resulting in reduced die fractures (20).

Alloy solder connect assembly and method of connection

Abstract: An electronic assembly (100) includes multiple solder connections (101) coupling faying surfaces (202, 204) of two substrates (106, 108). A solder connection (201) is fabricated by reflow heating of a first, less compliant solder paste (312, 314) and a compliant preform (210) so as to cause compliant material of the preform (210) to dissolve into the solder paste (312, 314). Upon solidification of the solder paste (312, 314), blended regions (520, 522), having a gradual, changing concentration of compliant material form between resulting fillets (212, 214) and the preform (210). The blended regions (520, 522) transfer temperature induced shear stresses, caused by thermal cycling of the electronic assembly (100), from the fillets (212, 214) into the compliant preform (210).