Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Cleaning aluminum fluoride coatings from plasma reactor walls in SiCl4/Cl2 plasmas

Abstract: The formation of aluminum fluoride layers on the inner part of plasma reactor walls is known to be a serious issue for plasma etching processes: it causes process drifts and particle generation. AlFx coatings are formed on the reactor walls as soon as the Al2O3 reactor walls are exposed to fluorine (F)-based plasmas. Since plasma reactors are always cleaned in fluorine chemistries, SF6 for example, AlFx formation is inevitable in the typical plasma clean conditions used in manufacturing. AlFx material being extremely etch resistant, it cannot be removed from reactor walls: it accumulates until particles flake off, then imposing a wet clean of the plasma reactor. In this paper, we review the different methods to reduce or eliminate the formation of AlFx and we report that SiClx radicals/ions etch AlFx material by forming AlClx and SiFx products. By using a dedicated technique based on x-ray photoelectron spectroscopy to analyze the reactor walls, we show that AlFx (and also YFx) coatings formed on the reactor walls are cleared in SiCl4/Cl2 plasmas, restoring clean Al2O3 (Y2O3) walls before processing the next wafer. As a result the wafer-to-wafer reproducibility and the mean time between reactor wet cleans are probably significantly improved. Furthermore, SiCl4-based plasma chemistries efficiently remove other metal fluorides (such as HfFx) and more generally metallic oxides (high-k) from the reactor walls.

Uplink control channel allocation

Abstract: Various methods of allocating uplink control channels in a communication system (100) are implemented at a resource scheduler (107) or a user equipment (UE) (103, 105). In one method the scheduler (107) reserves resources for a downlink data channel (305) and signals a corresponding downlink data channel grant (311) and also reserves resources for a persistent uplink control channel (307) for a longer duration than the data channel grant. Signaling overhead associated with a grant for this persistent uplink control channel is reduced over a full dynamic grant. A predetermined rule (407) can be used at the scheduler and at the UE to avoid overhead signaling associated with a grant for this persistent control channel. Predetermined rules at the UE and scheduler can also be used to reserve appropriate resources (409) and select appropriate MCS levels for control information and the control information and uplink data can be transported over a common uplink channel when a time overlap occurs between an uplink data channel and the persistent control channel.

Method of applying cladding material on conductive lines of MRAM devices

Abstract: A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer is then immersed in an electroless plating bath to form a flux concentrating layer on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer on the flux concentrating layer.

Simultaneous voice and asynchronous data telephone

Abstract: A telephone which can receive and transmit voice and asynchronous data simultaneously is provided A signalling circuit provides signals indicating the request for a communication link or requesting a communication link to a predetermined location A transceiver circuit synchronously receives and transmits frames of digital data bits representing data, voice and signalling information A voice digitizer circuit converts the received frames of digital bits to an analog output and converts a received voice signal to a digital voice output An interface circuit is used to interface between an asynchronous data source and the synchronous transceiver circuit The telephone is line powered by utilizing DC isolating transformers to power both voice and data circuitry