Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

GeSOI transistor with low junction current and low junction capacitance and method for making the same

Abstract: A semiconductor device (101) is provided herein which comprises a substrate (103) comprising germanium. The substrate has source (107) and drain (109) regions defined therein. A barrier layer (111) comprising a first material that has a higher bandgap (Eg) than germanium is disposed at the boundary of at least one of said source and drain regions. At least one of the source and drain regions comprises germanium.

Method of manufacturing vertical semiconductor device

Abstract: An n-channel device (10) and a p-channel device (11) are formed from a single epitaxial silicon layer (60,61). During the deposition of the single epitaxial silicon layer (60,61), dopants are added to the epitaxial reaction chamber and subsequently changed to define a drain region (24,33), a channel region (27,34), and a source region (30,35). The dopant concentration is modified during the formation of the channel region (27,34) to create a doping profile (50). The doping profile (50) has a first profile (51) that is constant and a second profile (52) that changes.

Method and apparatus for performing multiplexed and non-multiplexed bus cycles in a data processing system

Abstract: Method and apparatus for performing multiplexed and non-multiplexed bus cycles in a data processing system (10). The present invention allows a data processing system (10) to switch from multiplexed bus cycles to non-multiplexed bus cycles, and vice-versa, without requiring the data processing system (10) to be reset. In one embodiment of the present invention, a single user programmable control bit (90) is used to select whether an external bus cycle will be multiplexed or non-multiplexed. In more complex embodiments of the present invention, the ability to switch between multiplexed external bus cycles and non-multiplexed external bus cycles may be achieved by way of a plurality of user programmable register fields (96, 100, 102, and 104) located in registers 44. The plurality of user programmable register fields (96, 100, 102, and 104) may be associated with one or more chip select signals.

MEMS variable capacitor with stabilized electrostatic drive and method therefor

Abstract: A micro electro-mechanical systems device having variable capacitance is controllable over the full dynamic range and not subject to the “snap effect” common in the prior art. The device features an electrostatic driver ( 120 ) having a driver capacitor of fixed capacitance ( 121 ) in series with a second driver capacitor of variable capacitance ( 126 ). A MEMS variable capacitor ( 130 ) is controlled by applying an actuation voltage potential to the electrostatic driver ( 120 ). The electrostatic driver ( 120 ) and MEMS variable capacitor ( 130 ) are integrated in a single, monolithic device.

Integrated circuit having multiple memory types and method of formation

Abstract: A transistor (10) is formed having three separately controllable gates (44, 42, 18). The three gate regions may be electrically biased differently and the gate regions may have different conductivity properties. The dielectrics on the channel sidewall may be different than the dielectrics on the top of the channel. Electrical contacts to source, drain and the three gates is selectively made. By including charge storage layers, such as nanoclusters, adjacent the transistor channel and controlling the charge storage layers via the three gate regions, both volatile and non-volatile memory cells are realized using the same process to create a universal memory process. When implemented as a volatile cell, the height of the transistor and the characteristics of channel sidewall dielectrics control the memory retention characteristics. When implemented as a nonvolatile cell, the width of the transistor and the characteristics of the overlying channel dielectrics control the memory retention characteristics.