Freescale Semiconductor

About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..

Power amplifier having nested amplitude modulation controller and phase modulation controller

Abstract: Transmitting signals containing amplitude modulated (AM) and phase modulation (PM) components requires a transmitter having AM and PM control loops (515, 517). The PM control loop provides phase modulation, frequency translation and phase predistortion for a transmitter. The phase predistortion/correction is accomplished by using an oscillator (505), thus, the amount of PA phase correction is essentially unlimited. Additionally, the PM control loop (517) is nested about a power amplifier (507) (PA), allowing the PM control loop (517) to correct for any distortion introduced by the PA (507).

Semiconductor device having a wire bond pad and method therefor

Abstract: An integrated circuit (50) has a wire bond pad (53). The wire bond pad (53) is formed on a passivation layer (18) over active circuitry (26) and/or electrical interconnect layers (24) of the integrated circuit (50). The wire bond pad (53) is connected to a plurality of final metal layer portions (51, 52). The plurality of final metal layer portions (51, 52) are formed in a final interconnect layer of the interconnect layers (24). In one embodiment, the bond pad (53) is formed from aluminum and the final metal layer pads are formed from copper. The wire bond pad (53) allows routing of conductors in a final metal layer (28) directly underlying the bond pad (53), thus allowing the surface area of the semiconductor die to be reduced.

System and method for baseband removal of narrowband interference in ultra wideband signals

Abstract: A system, method, and computer program product for baseband removal of narrowband interference contained within UWB signals in a UWB receiver. The RFI is extracted from the UWB signal by employing a filter that is matched approximately with the RFI in the baseband signal, extracting RFI, and passing the desired data signal unscathed.

Etch method in the manufacture of an integrated circuit

Abstract: The present invention provides a method for etching a substrate in the manufacture of a semiconductor device, the method comprising contacting a surface of the substrate with ions extracted from a plasma formed from a gas comprising one or more of an oxygen-containing species, a nitrogen-containing species and an inert gas, and separately contacting the surface of the substrate with a plasma formed from a gas comprising a fluorine-containing species.

Modeling and Characterization of RF and Microwave Power FETs

Abstract: © Cambridge University Press 2007 and Cambridge University Press, 2009.This 2007 book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.