Institution
Freescale Semiconductor
About: Freescale Semiconductor is a based out in . It is known for research contribution in the topics: Layer (electronics) & Signal. The organization has 7673 authors who have published 10781 publications receiving 149123 citations. The organization is also known as: Freescale Semiconductor, Inc..
Topics: Layer (electronics), Signal, Transistor, Integrated circuit, Amplifier
Papers published on a yearly basis
Papers
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20 Feb 2002TL;DR: In this article, a radio receiver (100 ) has an equalizer ( 500 ) that operates in the time domain to remove residual interference that is not removed by an IF filter ( 200 ) operating in the frequency domain that is caused by an adjacent interfering FM station.
Abstract: A radio receiver ( 100 ) has an equalizer ( 500 ) that operates in the time domain to remove residual interference that is not removed by an IF filter ( 200 ) operating in the frequency domain that is caused by an adjacent interfering FM station. The equalizer ( 500 ) includes a modified constant modulus algorithm (CMA) to generate a tap update signal from the output of the equalizer ( 500 ). The equalizer ( 500 ) uses the modified CMA to reduce an amplitude fluctuation of the received signal caused by the adjacent interfering station. The CMA is modified to use an infinite impulse response (IIR) filter ( 540 ) to generate the tap update. The IIR filter ( 540 ) also speeds up a convergence of the modified CMA to provide better performance.
55 citations
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TL;DR: In this article, a simplified model for the atomic layer deposition with HfCl"4 as a metal precursor and H"2O"2 as the oxidant was introduced, which suggests that the initial interface growth results in a typically less than 1 monolayer of Hf in the first metallic layer.
55 citations
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08 Dec 2006TL;DR: In this paper, a scalable video system including a deblocking control circuit which determines the state of a controllable control flag in a frame header of a received video sequence and retrieves deblocking parameters for some but not all layers of the frame.
Abstract: A method of generating a video sequence including setting a state of a deblocking control flag in a frame header of a frame to indicate that a deblocking parameter is presented for some but not all layers. A method of processing a received video sequence including determining a state of a deblocking control flag of a frame header and retrieving a deblocking parameter for some but not all layers. A scalable video system including a deblocking control circuit which sets a state of a deblocking control flag in a frame header to indicate that a deblocking parameter is presented for some but not all layers. A scalable video system including a deblocking control circuit which determines the state of a deblocking control flag in a frame header of a received video sequence and which retrieves a deblocking parameter for some but not all layers of the frame.
55 citations
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23 Aug 1996TL;DR: A magnetic random access memory (MRAM) as discussed by the authors has a plurality of stacked memory cells on semiconductor substrate, each cell basically having a portion of magnetic material (12), a word line (13), and sense line (14).
Abstract: A magnetic random access memory (10) has a plurality of stacked memory cells on semiconductor substrate (11), each cell basically having a portion of magnetic material (12), a word line (13), and sense line (14). Upper sense line (22) is electrically coupled to lower sense line (12) via conductor line (23) with ohmic contacts. In order to read and store states in the memory cell, lower and upper word lines (13, 18) are activated, thereby total magnetic field is applied to portion of magnetic material (11). This stacked memory structure allows magnetic random access memory (10) to integrate more memory cells on semiconductor substrate (11).
55 citations
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25 Mar 1991TL;DR: In this article, the patterned layer is removed by immersing the device in an organic solution without affecting the remaining metal layer, and the device is then rinsed in a reservoir of re-ionized water to remove the organic solution from the device while preventing microcorrosion.
Abstract: A process for fabricating a semiconductor device uses re-ionized water, such as carbonated water, to rinse the device while preventing microcorrosion of metal layers. In one embodiment of the invention, a semiconductor wafer is provided having an overlying metal layer and a patterned layer overlying the overlying metal layer. Selected portions of the overlying metal layer are etched using the patterned layer as an etch mask. The patterned layer is removed by immersing the device in an organic solution without affecting the remaining metal layer. The device is then rinsed in a reservoir of re-ionized water to remove the organic solution from the device while preventing microcorrosion of the remaining metal layer.
55 citations
Authors
Showing all 7673 results
Name | H-index | Papers | Citations |
---|---|---|---|
David Blaauw | 87 | 750 | 29855 |
Krishnendu Chakrabarty | 79 | 996 | 27583 |
Rajesh Gupta | 78 | 936 | 24158 |
Philippe Renaud | 77 | 773 | 26868 |
Min Zhao | 71 | 547 | 24549 |
Gary L. Miller | 63 | 306 | 13010 |
Paul S. Ho | 60 | 475 | 13444 |
Ravi Subrahmanyan | 59 | 353 | 14244 |
Jing Shi | 53 | 222 | 10098 |
A. Alec Talin | 52 | 311 | 12981 |
Chi Hou Chan | 48 | 511 | 9504 |
Lin Shao | 48 | 380 | 12737 |
Johan Åkerman | 48 | 306 | 9814 |
Philip J. Tobin | 47 | 186 | 6502 |
Alexander A. Demkov | 47 | 331 | 7926 |