General Electric

About: General Electric is a company organization based out in Boston, Massachusetts, United States. It is known for research contribution in the topics: Turbine & Rotor (electric). The organization has 76365 authors who have published 110557 publications receiving 1885108 citations. The organization is also known as: General Electric Company & GE.

On the generation of dislocations at misfitting particles in a ductile matrix

Abstract: The nucleation of a shear dislocation loop from the interface of a misfitting spherical particle in a deformable matrix is considered. The equilibrium shapes and positions of the nucleated dislocation have been calculated. There are two critical levels of misfit. The lower critical level, which is dependent on the particle size, must be reached before nucleation can occur. Above the upper critical level, which is virtually independent of the particle size, nucleation will always occur. Experimental measurements of the critical misfit show that the upper critical level describes the spontaneous generation of dislocations at coherent particles, whereas the lower level describes their generation at incoherent particles. Possible reasons for this are discussed.

Approaches for Reducing the Computational Cost of Interval Type-2 Fuzzy Logic Systems: Overview and Comparisons

Abstract: Interval type-2 fuzzy logic systems (IT2 FLSs) have demonstrated better abilities to handle uncertainties than their type-1 (T1) counterparts in many applications; however, the high computational cost of the iterative Karnik-Mendel (KM) algorithms in type-reduction means that it is more expensive to deploy IT2 FLSs, which may hinder them from certain cost-sensitive real-world applications. This paper provides a comprehensive overview and comparison of three categories of methods to reduce their computational cost. The first category consists of five enhancements to the KM algorithms, which are the most popular type-reduction algorithms to date. The second category consists of 11 alternative type-reducers, which have closed-form representations and, hence, are more convenient for analysis. The third category consists of a simplified structure for IT2 FLSs, which can be combined with any algorithms in the first or second category for further computational cost reduction. Experiments demonstrate that almost all methods in these three categories are faster than the KM algorithms. This overview and comparison will help researchers and practitioners on IT2 FLSs choose the most suitable structure and type-reduction algorithms, from a computational cost perspective. A recommendation is given in the conclusion.

System for managing multiple projects of similar type using dynamically updated global database

Abstract: A system for managing multiple projects of a similar type has a global project management database for storing data for all participating projects which is dynamically updated with best current data representing best current practices across all participating projects in the system. Localized computer terminals are operated at each local site with a common project management program and data imported from the global project management database. Periodically, the local terminals export data to the global project management database which are evaluated to determine any new best current practices across all participating projects and to update the global project management database with the new best current practices. Upon periodically importing data from the global project management database, each localized computer terminal is updated with the new best current practices across all participating projects.

Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes

Abstract: We have studied the electrical characteristics and optical properties of GaN/InGaN multiple quantum well (MQW) light-emitting diodes (LEDs) grown by metalorganic chemical vapor deposition. It appears that there is an essential link between material quality and the mechanism of current transport through the wide-bandgap p-n junction. Tunneling behavior dominates throughout all injection regimes in a device with a high density of defects in the space-charge region, which act as deep-level carrier traps. However, in a high-quality LED diode, temperature-dependent diffusion-recombination current has been identified with an ideality factor of 1.6 at moderate biases. Light output has been found to follow a power law, i.e., L /spl prop/ I/sup m/ in both devices. In the high-quality LED, nonradiative recombination centers are saturated at current densities as low as 1.4 /spl times/ 10/sup -2/ A/cm/sup 2/. This low saturation level indicates that the defects in GaN, especially the high density of edge dislocations, are generally optically inactive.

Thermoelectric Properties of Bismuth Telluride and its Alloys

Abstract: PREVIOUS publications from this Laboratory have described the progress made with bismuth telluride in connexion with thermoelectric refrigeration or generation. With a thermo-junction between p-type bismuth telluride and bismuth the maximum temperature difference obtained1 was 26° C., and between p- and n-type bismuth telluride2 40°C. This corresponded with a figure of merit 0.0335 degree–1/2. Here η is the thermoelectric power, σ the electrical conductivity, and K the thermal conductivity.