General Electric

About: General Electric is a company organization based out in Boston, Massachusetts, United States. It is known for research contribution in the topics: Turbine & Rotor (electric). The organization has 76365 authors who have published 110557 publications receiving 1885108 citations. The organization is also known as: General Electric Company & GE.

Constructing force-closure grasps

Abstract: This paper presents fast and simple algorithms for directly constructing force-closure grasps based on the shape of the grasped object. The synthesis of force-closure grasps finds in dependent regions of contact for the fingertips, such that the motion of the grasped object is totally constrained. A force- closure grasp implies equilibrium grasps exist. In the reverse direction, we show that most nonmarginal equilibrium grasps are force-closure grasps.

A General Empirical Solution to the Macro Software Sizing and Estimating Problem

Abstract: Application software development has been an area of organizational effort that has not been amenable to the normal managerial and cost controls. Instances of actual costs of several times the initial budgeted cost, and a time to initial operational capability sometimes twice as long as planned are more often the case than not.

Built-Up Films of Barium Stearate and Their Optical Properties

Abstract: The technique of depositing successive single layers of molecules of various stearates on a solid surface is described. Films containing 3001 layers have been built of barium-copper stearate. A photograph shows films built in a series of steps having intervals of 2 molecular layers. The contrast of the steps is plainly visible when the slide is illuminated by polarized light at angles near grazing incidence. By measuring the angles at which films containing known numbers of layers reflect minimum intensity of monochromatic light for the first five interference fringes, the thickness per layer and refractive index can be calculated with great accuracy. The thickness per layer of barium stearate was found to be 24.40A. The presence of traces of foreign substances in the water affect the spacing by 1 to 3 percent. The films are uniaxial crystals, the optic axis being perpendicular to the surface on which the films are built. The refractive index of the ordinary ray, ${n}_{1}$, and of the extraordinary ray in a direction perpendicular to the axis, ${n}_{3}$, are ${n}_{1}=1.491$, ${n}_{3}=1.551$. Equations are given which describe the refraction of the extraordinary ray, the intensity of the rays reflected from the upper surface and from the film solid boundary, the phase change at the boundaries, Brewster's angle, and other special properties of birefringent films. The intensity of the light and dark fringes reflected by films built on a series of glasses of known refractive indices is used as a measure of ${n}_{1}$. Skeleton films. Barium stearate films built at $\mathrm{pH}l7.0$ are composed of a mixture of stearic acid and neutral stearate. The stearic acid can be dissolved by benzene leaving a skeleton of stearate which is birefringent and has refractive indices much lower than those of the normal film. Measurements are given of a skeleton for which ${n}_{1}=1.30$, others for which ${n}_{1}=1.32$, ${n}_{3}=1.39$. Skeletons have been built having ${n}_{1}=1.25$ and 1.22. The skeleton for which ${n}_{1}=1.30$ had 99.2 percent of the thickness of the original film, although only 63.7 percent of its density.

Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K

Abstract: The intrinsic absorption spectra of high-purity single-crystal germanium and silicon have been measured at 77\ifmmode^\circ\else\textdegree\fi{}K and 300\ifmmode^\circ\else\textdegree\fi{}K. The spectral regions studied encompassed a range of absorption coefficient from 0.1 ${\mathrm{cm}}^{\ensuremath{-}1}$ to ${10}^{5}$ ${\mathrm{cm}}^{\ensuremath{-}1}$ for each material. The germanium data may be interpreted as indicating a threshold for direct transitions at 0.81 ev at 300\ifmmode^\circ\else\textdegree\fi{}K and at 0.88 ev at 77\ifmmode^\circ\else\textdegree\fi{}K. The threshold for indirect transitions was placed at 0.62 ev and 0.72 ev for 300\ifmmode^\circ\else\textdegree\fi{}K and 77\ifmmode^\circ\else\textdegree\fi{}K, respectively. For silicon the data were not as readily interpreted However, there is an indication that the threshold for direct transitions should be placed at about 2.5 ev and the threshold for indirect transitions at 1.06 ev and 1.16 ev at 300\ifmmode^\circ\else\textdegree\fi{}K and 77\ifmmode^\circ\else\textdegree\fi{}K, respectively.