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Institution

General Electric

CompanyBoston, Massachusetts, United States
About: General Electric is a company organization based out in Boston, Massachusetts, United States. It is known for research contribution in the topics: Turbine & Rotor (electric). The organization has 76365 authors who have published 110557 publications receiving 1885108 citations. The organization is also known as: General Electric Company & GE.
Topics: Turbine, Rotor (electric), Signal, Combustor, Coating


Papers
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Journal ArticleDOI
TL;DR: The local heat transfer coefficient, pressure drop, and critical heat flux have been measured for saturated boiling of R-113 in a round tube with an internal diameter of 0.31 cm, and heated lengths of 12.3 and 24.6 cm.

610 citations

Journal ArticleDOI
TL;DR: In this article, the peak electric field strength at avalanche breakdown was used as a critical material parameter for evaluating the quality of a semiconducting material for high-power electronics, and it was shown that SiC and diamond could offer significant advantages compared to either silicon or group III-V compound semiconductors for these applications.
Abstract: Elemental and compound semiconductors, including wide-bandgap semiconductors, are critically examined for high-power electronic applications in terms of several parameters. On the basis of an analysis applicable to a wide range of semiconducting materials and by using the available measured physical parameters, it is shown that wide-bandgap semiconductors such as SiC and diamond could offer significant advantages compared to either silicon or group III-V compound semiconductors for these applications. The analysis uses peak electric field strength at avalanche breakdown as a critical material parameter for evaluating the quality of a semiconducting material for high-power electronics. Theoretical calculations show improvement by orders of magnitude in the on-resistance, twentyfold improvement in the maximum frequency of operation, and potential for successful operation at temperatures beyond 600 degrees C for diamond high-power devices. New figures of merit for power-handling capability that emphasize electrical and thermal conductivities of the material are derived and are applied to various semiconducting materials. It is shown that an improvement in power-handling capabilities of semiconductor devices by three orders of magnitude is feasible by replacing silicon with silicon carbide; improvement in power-handling capability by six orders of magnitude is projected for diamond-based devices. >

605 citations

Journal ArticleDOI
TL;DR: In this article, a simple theory of electronic and ionic oscillations in an ionized gas has been developed and the correlation between theory and observed oscillations is to be considered tentative until simpler experimental conditions can be attained.
Abstract: A simple theory of electronic and ionic oscillations in an ionized gas has been developed. The electronic oscillations are so rapid (ca. ${10}^{9}$ cycles) that the heavier positive ions are unaffected. They have a natural frequency ${\ensuremath{ u}}_{e}={(\frac{n{e}^{2}}{\ensuremath{\pi}m})}^{\frac{1}{2}}$ and, except for secondary factors, do not transmit energy. The ionic oscillations are so slow that the electron density has its equilibrium value at all times. They vary in type according to their wave-length. The oscillations of shorter wave-length are similar to the electron vibrations, approaching the natural frequency ${\ensuremath{ u}}_{p}={\ensuremath{ u}}_{e}{(\frac{{m}_{e}}{{m}_{p}})}^{\frac{1}{2}}$ as upper limit. The oscillations of longer wave-length are similar to sound waves, the velocity approaching the value $v={(\frac{k{T}_{e}}{{m}_{p}})}^{\frac{1}{2}}$. The transition occurs roughly (i.e. to 5% of limiting values) within a 10-fold wave-length range centering around $2{(2)}^{\frac{1}{2}}\ensuremath{\pi}{\ensuremath{\lambda}}_{D}$, ${\ensuremath{\lambda}}_{D}$ being the "Debye distance." While the theory offers no explanation of the cause of the observed oscillations, the frequency range of the most rapid oscillations, namely from 300 to 1000 megacycles agrees with that predicted for the oscillations of the ultimate electrons. Another observed frequency of 50 to 60 megacycles may correspond to oscillations of the beam electrons. Frequencies from 1.5 megacycles down can be attributed to positive ion oscillations. The correlation between theory and observed oscillations is to be considered tentative until simpler experimental conditions can be attained.

601 citations

Journal ArticleDOI
TL;DR: In this paper, the most recent progress in the development of Nb-silicide-based in-situ composites for very high-temperature applications is reviewed, with emphasis on rupture resistance and oxidation performance.
Abstract: The temperatures of airfoil surfaces in advanced turbine engines are approaching the limits of nickel-based superalloys. Innovations in refractory metal-intermetallic composites (RMICs) are being pursued, with particular emphasis on systems based on Nb-Si and Mo-Si-B alloys. These systems have the potential for service at surface temperatures >1350 °C. The present article will review the most recent progress in the development of Nb-silicide-based in-situ composites for very-high-temperature applications. Nb-silicide-based composites contain high-strength silicides that are toughened by a ductile Nb-based solid solution. Simple composites are based on binary Nb-Si alloys; more complex systems are alloyed with Ti, Hf, Cr, and Al. In higher-order silicide-based systems, alloying elements have been added to stabilize intermetallics, such as Laves phases, for additional oxidation resistance. Alloying schemes have been developed to achieve an excellent balance of room-temperature toughness, high-temperature creep performance, and oxidation resistance. Recent progress in the development of composite processing-structure-property relationships in Nb-silicide-based in-situ composites will be described, with emphasis on rupture resistance and oxidation performance. The Nb-silicide composite properties will be compared with those of advanced Ni-based superalloys.

599 citations

Journal ArticleDOI
Frank S. Ham1
TL;DR: In this paper, it was shown that the dynamical Jahn-Teller effect in a complex having orbital degeneracy may partially quench spin-orbit interaction, the orbital parts of the Zeeman and hyperfine interactions, and other orbital operators governing response to perturbations such as strain or applied electric fields.
Abstract: It is shown that the dynamical Jahn-Teller effect in a complex having orbital degeneracy may partially quench spin-orbit interaction, the orbital parts of the Zeeman and hyperfine interactions, and other orbital operators governing response to perturbations such as strain or applied electric fields. Such dynamical quenching thus decreases the value of orbital reduction factors usually attributed in paramagnetic resonance studies to covalent bonding, without necessarily causing anisotropy in the spectrum of an individual complex. The dynamical Jahn-Teller effect may also substantially enhance various second-order effects. Such dynamic effects thus may make important changes in the parameters of the spin Hamiltonian without changing its symmetry. It is shown that the dynamical Jahn-Teller effect accounts qualitatively for unusual features in the spectra of interstitial transition-metal ions ${\mathrm{Cr}}^{0}$, ${\mathrm{Mn}}^{+}$, ${\mathrm{Mn}}^{0}$, and ${\mathrm{Fe}}^{+}$ in silicon and that it is probably of importance equal to or greater than that of covalent bonding in the interpretation of the spectrum of ${\mathrm{Fe}}^{2+}$ in MgO and CaO. A mathematical analysis of the dynamical effects is given for an orbital triplet state in interaction with a doublet or triplet vibrational mode, and some results are given also when the coupling is with the phonon continuum.

597 citations


Authors

Showing all 76370 results

NameH-indexPapersCitations
Cornelia M. van Duijn1831030146009
Krzysztof Matyjaszewski1691431128585
Gary H. Glover12948677009
Mark E. Thompson12852777399
Ron Kikinis12668463398
James E. Rothman12535860655
Bo Wang119290584863
Wei Lu111197361911
Harold J. Vinegar10837930430
Peng Wang108167254529
Hans-Joachim Freund10696246693
Carl R. Woese10527256448
William J. Koros10455038676
Thomas A. Lipo10368243110
Gene H. Golub10034257361
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202216
2021415
20201,027
20191,418
20181,862