Institution
General Electric
Company•Boston, Massachusetts, United States•
About: General Electric is a company organization based out in Boston, Massachusetts, United States. It is known for research contribution in the topics: Turbine & Rotor (electric). The organization has 76365 authors who have published 110557 publications receiving 1885108 citations. The organization is also known as: General Electric Company & GE.
Topics: Turbine, Rotor (electric), Signal, Combustor, Coating
Papers published on a yearly basis
Papers
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06 Oct 1996TL;DR: Turn-to-turn fault detection is based on the principal that symmetrical motors powered by symmetrical multiphase voltage sources will have no negative sequence currents flowing in the leads as mentioned in this paper.
Abstract: Turn fault detection is based on the principal that symmetrical (unfaulted) motors powered by symmetrical multiphase voltage sources will have no negative sequence currents flowing in the leads. A turn-to-turn fault will break that symmetry and give rise to a negative sequence current which may then be used as a measure of fault severity or to initiate protective action such as a circuit breaker trip. A new way of looking at the effects of turn faults has been developed that improves sensitivity and speed while reducing the probability of misdetection, taking into account voltage balance, load or voltage variation and instrument errors. The method has been implemented on a PC and tested, in real time, on a specially prepared small motor. Reliable detection of one shorted turn out of 648 turns per phase (in a Y connected motor) was demonstrated with the fault indicator becoming fully developed in two cycles of line frequency after initiation of the fault.
283 citations
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TL;DR: In this paper, a stream of highly electrified uniform droplets about 0.1 mm in diameter can be produced by applying potentials of 5-10 kv to liquids in small capillaries.
282 citations
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01 Jul 1991TL;DR: An improved high density interconnect structure may include electronic components mounted on both sides of its substrate or a substrate which is only as thick as the semiconductor chips which reduces the overall structure thickness as mentioned in this paper.
Abstract: An improved high density interconnect structure may include electronic components mounted on both sides of its substrate or a substrate which is only as thick as the semiconductor chips which reduces the overall structure thickness to the thickness of the semiconductor chips plus the combined thickness of the high density interconnect structure's dielectric and conductive layers In the two-sided structures, feedthroughs, which are preferably hermetic, provide connections between opposite sides of the substrate Substrates of either of these types may be stacked to form a three-dimensional structure Means for connecting between adjacent substrates are preferably incorporated within the boundaries of the stack rather than on the outside surface thereof
282 citations
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TL;DR: Analysis of development of new generation of gas sensors based on the multivariable response principles is provided with a perspective for future needs in fundamental and applied aspects of gas sensing and with the 2025 roadmap for ubiquitous gas monitoring.
Abstract: Modern gas monitoring scenarios for medical diagnostics, environmental surveillance, industrial safety, and other applications demand new sensing capabilities. This Review provides analysis of development of new generation of gas sensors based on the multivariable response principles. Design criteria of these individual sensors involve a sensing material with multiresponse mechanisms to different gases and a multivariable transducer with independent outputs to recognize these different gas responses. These new sensors quantify individual components in mixtures, reject interferences, and offer more stable response over sensor arrays. Such performance is attractive when selectivity advantages of classic gas chromatography, ion mobility, and mass spectrometry instruments are canceled by requirements for no consumables, low power, low cost, and unobtrusive form factors for Internet of Things, Industrial Internet, and other applications. This Review is concluded with a perspective for future needs in fundament...
281 citations
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TL;DR: In this paper, it was shown that motion of a dislocation through a crystal with short-range order partially destroys the order and produces an interface of positive mean energy γ per unit area, an additional stress τ = γ b is required to force the dislocation along the slip plane.
280 citations
Authors
Showing all 76370 results
Name | H-index | Papers | Citations |
---|---|---|---|
Cornelia M. van Duijn | 183 | 1030 | 146009 |
Krzysztof Matyjaszewski | 169 | 1431 | 128585 |
Gary H. Glover | 129 | 486 | 77009 |
Mark E. Thompson | 128 | 527 | 77399 |
Ron Kikinis | 126 | 684 | 63398 |
James E. Rothman | 125 | 358 | 60655 |
Bo Wang | 119 | 2905 | 84863 |
Wei Lu | 111 | 1973 | 61911 |
Harold J. Vinegar | 108 | 379 | 30430 |
Peng Wang | 108 | 1672 | 54529 |
Hans-Joachim Freund | 106 | 962 | 46693 |
Carl R. Woese | 105 | 272 | 56448 |
William J. Koros | 104 | 550 | 38676 |
Thomas A. Lipo | 103 | 682 | 43110 |
Gene H. Golub | 100 | 342 | 57361 |