Institution
Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
Education•Topi, Pakistan•
About: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology is a education organization based out in Topi, Pakistan. It is known for research contribution in the topics: Quantum efficiency & Diode. The organization has 618 authors who have published 940 publications receiving 10674 citations.
Papers published on a yearly basis
Papers
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TL;DR: In this paper, the failure analysis of an actual Balance Arms surface was carried out using Fractography and Non Destructive testing techniques to dig out the root cause of the failure, which revealed microscopic signatures categorically pointing towards post failure surface mechanical damage.
4 citations
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TL;DR: In this article, a comparative study on the quantum dot sensitized solar sells (QDSSCs) using polysulfide and iodide/triiodide as redox liquid electrolytes aimed for the improvement in performance of CdS-sensitized solar cell.
Abstract: In this investigation we report comparative study on the quantum dot sensitized solar sells (QDSSCs) using polysulfide and iodide/triiodide as redox liquid electrolytes aimed for the improvement in performance of CdS sensitized solar cell. The CdS films were deposited upon bare FTO and nanocrystalline mesoporous TiO2 coated FTO substrates by following a successive ionic layer adsorption and reaction (SILAR) method. The films were characterized by using atomic force microscopy (AFM) measurements and UV–Visible (UV–vis) spectroscopy. Analysing the AFM images height of the nanocrystals was found to be less than 2.84 nm. The estimated size of the CdS quantum dots (QDs) obtained using the UV–vis data and hyperbolic band model (HBM) was 4.94 nm. Photovoltaic performance and impedance spectroscopic measurements were performed on these FTO/TiO2/CdS/Electrolyte/Carbon type QDSSCs under an AM1.5 illumination (100 mW.cm−2) and dark, respectively. The overall power conversion efficiency, short circuit current and the fill factor of polysulfide based device were observed higher than the iodide/triiodide based cell by 280%, 123%, and 95%, respectively. Improvement in series resistance (Rs) and shunt resistance (Rsh) values of polysulfide based device were observed by 830%, and 348%, respectively. The results achieved using low cost ploysulfide electrolyte and carbon as counter electrode are observed higher than the results of the recent attempts made by other research groups for enhancing performance of the CdS QDSSCs using platinum as counter electrode. The better performance of FTO/TiO2/CdS/Polysulfide/Carbon type QDSSC could be attributed to the higher hole-recovery rate of polysulfide leading to a lower probability for charge recombination and the higher electrocatalytic activity at the CE/electrolyte interface resulting the fast electron injection and transfer from CdS QDs into the photoanode substrate.
4 citations
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TL;DR: In this paper, polymer composite insulators have been extensively used for highvoltage (HV) transmission lines and substation insulations, and the in-service operation, various environmental...
Abstract: Due to many advantages, polymer composite insulators have been extensively used for high-voltage (HV) transmission lines and substation insulations. The in-service operation, various environmental ...
4 citations
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4 citations
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TL;DR: A comprehensive survey of FPGA-based TCAMs implemented using block random access memory (BRAM), lookup table RAM (LUTRAM), and flip-flops (FFs) is presented in this paper.
4 citations
Authors
Showing all 626 results
Name | H-index | Papers | Citations |
---|---|---|---|
Wajid Ali Khan | 128 | 1272 | 79308 |
Shuichi Miyazaki | 69 | 455 | 18513 |
Muhammad Zubair | 51 | 806 | 10265 |
Mohammad Islam | 44 | 192 | 9721 |
Asifullah Khan | 38 | 192 | 5109 |
Muhammad Waqas | 32 | 383 | 7336 |
Rana Abdul Shakoor | 30 | 140 | 3244 |
Noor Muhammad | 29 | 160 | 2656 |
Abdul Majid | 28 | 231 | 3134 |
Muhammad Abid | 27 | 377 | 3214 |
Iftikhar Ahmad | 26 | 143 | 2500 |
Shaheen Fatima | 24 | 79 | 2287 |
Ghulam Hussain | 24 | 127 | 1937 |
Zubair Ahmad | 24 | 145 | 1899 |
Muhammad Zahir Iqbal | 23 | 129 | 1624 |