Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

About: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology is a education organization based out in Topi, Pakistan. It is known for research contribution in the topics: Thin film & Quantum efficiency. The organization has 618 authors who have published 940 publications receiving 10674 citations.

On the enhancement of carrier injection efficiency by employing AlInN last quantum barrier in 277 nm ultraviolet light-emitting diodes

Abstract: The AlInN last quantum barrier (LQB) has been employed instead of conventional AlGaN in ultraviolet light-emitting diodes (UV LEDs). The simulation results reveal that p-doped AlInN and un-doped AlInN LQB effectively suppressed electron leakage and facilitated the movement of holes to the active zone, which is greatly attributed to the higher conduction band offset and lower valence band offset of the AlInN alloy. Moreover, AlInN has reduced the lattice mismatching, leading to a decrease in the induced polarization field. Hence, the internal quantum efficiency (IQE) and the radiative recombination rate, with the AlInN LQB, has been increased by 54% and 260%, respectively, as compared with conventional AlGaN-based LQB LEDs. Importantly, the AlInN LQB not only increased the IQE but also alleviated the efficiency droop dramatically. Additionally, the emission spectrum at 277 nm has been remarkably enhanced as compared with conventional LEDs. Thus, based on these results, it was found that the un-doped AlInN LQB is a feasible route for achieving efficient UV LEDs.

A Note on Proper Affine Vector Fields in Bianchi Type IV Space-Times

Abstract: Affine vector fields of Bianchi type IV space-times are investigated using holonomy and decomposability, the rank of the 6 6× Riemann matrix and direct integration technique. From the above study it follows that the Bianchi type IV space-times possesses only one case when it admits proper affine vector fields.

Electrical characterization of Al/methyl-red/Ag schottky diode

Abstract: :This paper reports the fabrication and electrical characterization of surface typeAl/methyl-red/Ag Schottky barrier diode. Electrodes were deposited on glass substratewith a narrow gap between them followed by spin coating of methyl-red (MR). A thinfilm of MR was deposited from 10 wt% solution in benzene by spin coater at an angularspeed of 2000 revolution per minute (RPM) on a glass substrate with preliminarydeposited metal electrodes. The thickness of the film was 300 nm. The length and widthof the semiconducting channel between metallic electrodes were equal to 30 􀈝m and 17mm, respectively. The current-voltage (I-V) characteristics of Al/MR/Ag structureshowed rectification behavior. The value of rectification ratio was found about 200 at ±4V. I-V characteristics of Al/MR/Ag structure were also investigated as a function oftemperature ranging from 25-55 °C. The sample was also investigated as humiditysensor at room temperature within the relative humidity (RH) range of 30-90%. Theimpedance changed linearly and approximately reduced 5 orders of magnitude over thewhole humidity range. It was observed that under the effect of humidity the capacitanceof the MR film increased by 1.5 times over the whole humidity range.

Closed Form Approximation Solutions for the Restricted Circular Three Body Problem.

Abstract: An approach is developed to find approximate solutions to the restricted circular three body problem. The solution is useful in approximately describing the position vectors of three spherically symmetric masses, one of which has a much smaller mass than the other two. These masses perform free motion under each others’ gravitational influence. The set of solutions is found using the Lambert’s wave function.