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Institution

Ghulam Ishaq Khan Institute of Engineering Sciences and Technology

EducationTopi, Pakistan
About: Ghulam Ishaq Khan Institute of Engineering Sciences and Technology is a education organization based out in Topi, Pakistan. It is known for research contribution in the topics: Quantum efficiency & Diode. The organization has 618 authors who have published 940 publications receiving 10674 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the uplink (UL) communications of MBS edge-users (M-EUs) are prone to jammers' interference (JI) due to wide-band jammers (WBJs), with sufficient knowledge of network parameters, such as frequency bands and transmit powers.
Abstract: In heterogeneous cellular networks (HetNets), small base stations (SBSs) are overlaid in the coverage region of a macro base station (MBS) to improve coverage and spectral efficiency. However, the performance of HetNets is significantly degraded by inter-cell interference (ICI) due to aggressive frequency reuse and multi-tier deployment. Besides ICI, the uplink (UL) communications of MBS edge-users (M-EUs) are prone to jammers’ interference (JI) due to wide-band jammers (WBJs). With sufficient knowledge of network parameters, such as frequency bands and transmit powers, WBJs inject JI in the UL communications band to affect legitimate communications by degrading UL signal-to-interference ratio (SIR). Such distributed denial-of-service (DDoS) attacks normally target organizations, shopping malls, or public gatherings by clustering around them. As a countermeasure, we use decoupled association (DeCA) for the M-EUs, as opposed to the coupled association (CA), to improve UL SIR. Additionally, we use proactive interference management scheme, known as reverse frequency allocation (RFA), along with DeCA to resist both ICI and JI. The results show that WBJs cluster effectively degrades the legitimate UL communications of the target. The results also demonstrate that the network performance degrades significantly by increasing jammers’ density and transmit power. Furthermore, DeCA with RFA leads to improved network performance due to effective ICI and JI mitigation.

9 citations

Journal ArticleDOI
TL;DR: In this paper, the authors presented a Privacy-Protecting ASKE scheme for the Internet of Drones (PASKE-IoD), which utilizes Authenticated Encryption (AE) primitive and hash function ASCON-hash to accomplish the ASKE phase.
Abstract: Unmanned aerial vehicles/drones are considered an essential ingredient of traffic motoring systems in smart cities. Interconnected drones, also called the Internet of Drones (IoD), gather critical data from the environmental area of interest and transmit the data to a server located at the control room for further processing. This transmission occurs via wireless communication channels, which are exposed to various security risks. Besides this, an External User (EU) occasionally demands access to real-time information stored at a specific drone rather than retrieving data from the server, which requires an efficient Authenticated Session Key Establishment (ASKE) approach to ensure a reliable communication in IoD environment. In this article, we present a Privacy-Protecting ASKE scheme for IoD (PASKE-IoD). PASKE-IoD utilizes Authenticated Encryption (AE) primitive “ASCON,” and hash function “ASCON-hash,” to accomplish the ASKE phase. PASKE-IoD checks the EU’s authenticity before allowing him to access the IoD environment resources. Moreover, PASKE-IoD enables EUs and drones to communicate securely after establishing a session key. Meticulous informal security analysis and security verification are carried out using Scyther to demonstrate that PASKE-IoD is immune to numerous covert security attacks. In addition, Burrows-Abadi-Needham logic is utilized to corroborate the logical exactitude of PASKE-IoD. A comparative analysis is presented to illustrate that PASKE-IoD is efficient and renders more security features than the eminent ASKE scheme.

9 citations

Journal ArticleDOI
TL;DR: In this article, the authors proposed an emission multiplier product matrix (EMPM), a novel approach that integrates CO2 emissions with input-output (I-O) tables for estimating pollution generated by inter-industry activities.
Abstract: The increasing emissions of carbon dioxide (CO2) have been a major concern for most of the countries around the world; and as a result, every country is concerned about setting appropriate strategies to curtail it. This study proposes emission multiplier product matrix (EMPM), a novel approach that integrates CO2 emissions with input-output (I-O) tables for estimating pollution generated by inter-industry activities. In combination with structural decomposition analysis (SDA), the proposed EMPM can be used to measure emissions and identify its key drivers such as changes in technology and demand variations. Instead of generalised strategies, this approach is helpful in devising sector-specific pollution reduction strategies. The proposed methodology can also be applied at the sectoral, regional, national or global scale for identification of emissions sources. This study applies the proposed EMPM approach in combination with SDA to the UK’s economy by using I-O tables and emission data for the period 1995–2009. The study finds that, overall, UK’s carbon emission can be reduced through a disaggregated policy aiming to curtail industrial emissions and ensuring a more efficient transport sector.

9 citations

Journal ArticleDOI
TL;DR: In this paper, the authors reported on the thin film characterization of a synthesized small molecular semiconductor N-butyl-N′-(6-hydroxyhexyl) perylene-3,4,9,10-tetracarboxylic acid diimide (N-BuHHPDI) and its potential use in Ag/N-BHPDI/PEDOT:PSS/p-Si heterojunction device.
Abstract: This paper reports on the thin film characterization of a synthesized small molecular semiconductor N-butyl-N′-(6-hydroxyhexyl) perylene-3,4,9,10-tetracarboxylic acid diimide (N-BuHHPDI) and its potential use in Ag/N-BuHHPDI/PEDOT:PSS/p-Si heterojunction device. The device is fabricated using spin coating of a conducting polymer PEDOT:PSS on p-Si substrate followed by thermal deposition of a 100-nm-thin layer of N-BuHHPDI. To complete the fabrication of Ag/N-BuHHPDI/PEDOT:PSS/p-Si heterostructure, silver (Ag) is used as the top electrode. The device shows non-ohmic and asymmetrical current–voltage (I–V) characteristics in dark conditions at 25°C which confirm the successful formation of rectifying heterojunction. Various diode parameters such as ideality factor (n), barrier height (ϕb), series resistance (Rs) and charge carrier mobility across the interface of the heterojunction are measured from the I–V characteristics. The non-ideal behavior of the diode is correlated with the film morphology obtained by atomic force microscopy. Fourier transformed infrared spectroscopy is performed to confirm the successful preparation of N-BuHHPDI. The fluorescence lifetime (22 ns) of the N-BuHHPDI thin film is measured via fluorescence spectroscopy. Different charge conduction mechanisms including the dominant one are studied for the fabricated device.

9 citations


Authors

Showing all 626 results

NameH-indexPapersCitations
Wajid Ali Khan128127279308
Shuichi Miyazaki6945518513
Muhammad Zubair5180610265
Mohammad Islam441929721
Asifullah Khan381925109
Muhammad Waqas323837336
Rana Abdul Shakoor301403244
Noor Muhammad291602656
Abdul Majid282313134
Muhammad Abid273773214
Iftikhar Ahmad261432500
Shaheen Fatima24792287
Ghulam Hussain241271937
Zubair Ahmad241451899
Muhammad Zahir Iqbal231291624
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20235
20229
2021180
2020154
2019100
201863