Hanbat National University

About: Hanbat National University is a education organization based out in Daejeon, South Korea. It is known for research contribution in the topics: Electrolyte & Thin film. The organization has 1715 authors who have published 3804 publications receiving 64638 citations.

Heterogeneous Cellular Networks with Flexible Cell Association: A Comprehensive Downlink SINR Analysis

Abstract: In this paper we develop a tractable framework for SINR analysis in downlink heterogeneous cellular networks (HCNs) with flexible cell association policies. The HCN is modeled as a multi-tier cellular network where each tier's base stations (BSs) are randomly located and have a particular transmit power, path loss exponent, spatial density, and bias towards admitting mobile users. For example, as compared to macrocells, picocells would usually have lower transmit power, higher path loss exponent (lower antennas), higher spatial density (many picocells per macrocell), and a positive bias so that macrocell users are actively encouraged to use the more lightly loaded picocells. In the present paper we implicitly assume all base stations have full queues; future work should relax this. For this model, we derive the outage probability of a typical user in the whole network or a certain tier, which is equivalently the downlink SINR cumulative distribution function. The results are accurate for all SINRs, and their expressions admit quite simple closed-forms in some plausible special cases. We also derive the average ergodic rate of the typical user, and the minimum average user throughput - the smallest value among the average user throughputs supported by one cell in each tier. We observe that neither the number of BSs or tiers changes the outage probability or average ergodic rate in an interference-limited full-loaded HCN with unbiased cell association (no biasing), and observe how biasing alters the various metrics.

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

Abstract: A method for annealing metal-oxide semiconductor films with deep-ultraviolet light yields thin-film transistors with performance comparable to that of thermally annealed devices, and widens the range of substrates on which such devices can be fabricated. Solution-processable metal-oxide semiconductors are attractive materials for low-cost, flexible electronics, but the need to anneal the deposited materials at relatively high temperatures limits the range of substrates on which such devices can be fabricated. Now Yong-Hoon Kim and colleagues demonstrate that irradiating the solution-cast films with deep ultraviolet light can obviate the need for an annealing step. In this system, photochemical activation serves essentially the same purpose as annealing, and the resulting semiconducting materials have device performance levels comparable to those produced using the high-temperature techniques. Amorphous metal-oxide semiconductors have emerged as potential replacements for organic and silicon materials in thin-film electronics. The high carrier mobility in the amorphous state, and excellent large-area uniformity, have extended their applications to active-matrix electronics, including displays, sensor arrays and X-ray detectors1,2,3,4,5,6,7. Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates8,9,10,11,12,13. But metal-oxide formation by the sol–gel route requires an annealing step at relatively high temperature2,14,15,16,17,18,19, which has prevented the incorporation of these materials with the polymer substrates used in high-performance flexible electronics. Here we report a general method for forming high-performance and operationally stable metal-oxide semiconductors at room temperature, by deep-ultraviolet photochemical activation of sol–gel films. Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature. This photochemical activation is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that of thin-film transistors based on thermally annealed materials. The field-effect mobilities of the photo-activated metal-oxide semiconductors are as high as 14 and 7 cm2 V−1 s−1 (with an Al2O3 gate insulator) on glass and polymer substrates, respectively; and seven-stage ring oscillators fabricated on polymer substrates operate with an oscillation frequency of more than 340 kHz, corresponding to a propagation delay of less than 210 nanoseconds per stage.

The Role of Intrinsic Defects in Methylammonium Lead Iodide Perovskite.

Abstract: One of the major merits of CH3NH3PbI3 perovskite as an efficient absorber material for the photovoltaic cell is its long carrier lifetime. We investigate the role of the intrinsic defects of CH3NH3PbI3 on its outstanding photovoltaic properties using density-functional studies. Two types of defects are of interest, i.e., Schottky defects and Frenkel defects. Schottky defects, such as PbI2 and CH3NH3I vacancy, do not make a trap state, which can reduce carrier lifetime. Elemental defects like Pb, I, and CH3NH3 vacancies derived from Frenkel defects act as dopants, which explains the unintentional doping of methylammonium lead halides (MALHs). The absence of gap states from intrinsic defects of MALHs can be ascribed to the ionic bonding from organic–inorganic hybridization. These results explain why the perovskite MALHs can be an efficient semiconductor, even when grown using simple solution processes. It also suggests that the n-/p-type can be efficiently manipulated by controlling growth processes.

Coherent manipulation of electronic States in a double quantum dot.

Abstract: We investigate coherent time evolution of charge states (pseudospin qubit) in a semiconductor double quantum dot. This fully tunable qubit is manipulated with a high-speed voltage pulse that controls the energy and decoherence of the system. Coherent oscillations of the qubit are observed for several combinations of many-body ground and excited states of the quantum dots. Possible decoherence mechanisms in the present device are also discussed.

Mussel-Inspired Polydopamine-Treated Polyethylene Separators for High-Power Li-Ion Batteries

Abstract: Due to high energy densities and excellent cycle lives, Li-ion batteries (LIBs) have rapidly spread into portable electronics applications. [ 1–3 ] However, their performance standards in various areas including energy and power densities, cycle lives, and safety concerns need to be improved further for the future emerging markets, particularly targeting sustainable road transportation represented by electric vehicles (EVs). [ 1 , 3–5 ] Among the various standards, the low power density should be urgently addressed to enable the emergence of those applications. [ 4 , 6 , 7 ]