Heritage Institute of Technology

About: Heritage Institute of Technology is a based out in . It is known for research contribution in the topics: Steganography & Support vector machine. The organization has 581 authors who have published 1045 publications receiving 8345 citations.

Edge Element Controlled Null Steering in Beam-Steered Planar Array

Abstract: This letter investigates two different methods of null placement in uniformly excited beam-steered planar array. Both methods utilize control of excitation amplitude and phase of edge elements placed along the symmetrical axes of the array. The first method considers additional control in the presence of existing complex excitation, whereas the second method employes an additional control by redefining the excitation of edge elements. Effectiveness of the two methods has been illustrated through design examples of $22\,\times \,22$ and $41\,\times \,47$ planar arrays.

Enzymatic hydrolysis of banana stems (Musa acuminata): optimization of process parameters and inhibition characterization.

Abstract: In current work, an optimum solid loading (solid: liquid = 1:20), pH (4.8), temperature (50°C), and enzyme dosing of 20 filter paper unit (amount of enzyme required to release 1 µmol of glucose as reducing sugar from filter paper in per mL per minute) were enumerated for enzymatic hydrolysis of banana stem using cellulase from Trichoderma reesei. Further, inhibition study on enzymatic hydrolysis of banana stem was investigated by the supplementation of monosaccharides (glucose, galactose, mannose, xylose, and arabinose), disaccharide (cellobiose), and inhibitors (acetic acid and furfural obtained from pre-enzymatic hydrolysis steps). Glucose and cellobiose showed inhibitory effect on enzymatic hydrolysis of pretreated banana stem at or above 8 g/L while galactose, mannose, and xylose showed a significant inhibitory effect at or above 4 g/L. Instead of inhibition, arabinose enhanced the enzymatic hydrolysis with increase in total reducing sugars. Acetic acid did not show any significant inhibition ...

Comparative Study of Variations in Gate Oxide Material of a Novel Underlap DG MOS-HEMT for Analog/RF and High Power Applications

Abstract: In this paper an Underlap Double Gate (U-DG) Symmetric Heterojunction AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) with gate oxide materials of different dielectric constant has been studied using gate oxide materials such as Hafnium dioxide (HfO2), Silicon dioxide (SiO2) and a symmetric gate stack (GS) of HfO2-SiO2. In this work, the analog performance of the devices has been studied on the basis of parameters like transconductance (gm), transconductance generation factor (gm/ID) and intrinsic gain (gmR0). This paper depicts the effect of varying oxide materials on the analog and RF figure of merits (FOMs) such as the gate to drain capacitance (CGD), gate to source capacitance (CGS) and total gate capacitance (CGG), intrinsic resistances, cut-off frequency (fT) and maximum frequency of oscillation (fMAX) using non-quasi-static approach. Studies show that the introduction of a gate oxide layer in the MOS-HEMT device increases the gate controllability reducing gate leakage currents improving RF performance. U-DG AlGaN/GaN MOS-HEMT with HfO2 gate dielectric shows superior Power output efficiency (POE) of 55% compared to the HfO2-SiO2 composite structure and SiO2 with 26% and 20% respectively.

Selective Filters and Sinusoidal Oscillators Using CFA Transimpedance Pole

Abstract: Using a single current feedback amplifier (CFA) device, two new variable frequency sinusoidal RC oscillators are presented. The transadmittance pole of the device (AD-844) has been utilized in the design for generating sine wave signals covering a range of 1 MHz≤f 0≤31 MHz. Under open-loop conditions, both circuits exhibit resonance characteristics at moderate Q-values (1≤Q≤9). These responses have been experimentally verified with hardware circuit implementation and PSPICE macromodel simulation.