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Institution

Hewlett-Packard

CompanyPalo Alto, California, United States
About: Hewlett-Packard is a company organization based out in Palo Alto, California, United States. It is known for research contribution in the topics: Signal & Substrate (printing). The organization has 34663 authors who have published 59808 publications receiving 1467218 citations. The organization is also known as: Hewlett Packard & Hewlett-Packard Company.


Papers
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Journal ArticleDOI
TL;DR: This paper presents a general overview of Khoros with emphasis on its image processing and DSP tools.
Abstract: Data flow visual language systems allow users to graphically create a block diagram of their applications and interactively control input, output, and system variables. Khoros is an integrated software development environment for information processing and visualization. It is particularly attractive for image processing because of its rich collection of tools for image and digital signal processing. This paper presents a general overview of Khoros with emphasis on its image processing and DSP tools. Various examples are presented and the future direction of Khoros is discussed. >

253 citations

Patent
30 Apr 2003
TL;DR: In this paper, an electronic device of an embodiment of the invention is disclosed that at least partially displays a pixel of a display image, which includes a first reflector and a second reflector defining an optical cavity there between that is selective of a visible wavelength at an intensity.
Abstract: An electronic device of an embodiment of the invention is disclosed that at least partially displays a pixel of a display image. The device includes a first reflector and a second reflector defining an optical cavity therebetween that is selective of a visible wavelength at an intensity. The device includes a mechanism to allow optical properties of the cavity to be varied such that the visible wavelength and/or the intensity are variably selectable in correspondence with the pixel of the displayable image. The device also includes one or more transparent deposited films, one or more absorbing layers, an integral micro-lens, and/or one or more anti-stiction bumps. The deposited films are over one of the reflectors, for self-packaging of the device. The absorbing layers are over one of the reflectors, to reduce undesired reflections. The integral micro-lens is over one of the reflectors, and the anti-stiction bumps are between the reflectors.

253 citations

Journal ArticleDOI
TL;DR: A design study for a nano-scale crossbar memory system that uses memristors with symmetrical but highly nonlinear current-voltage characteristics as memory elements and simulation results show the feasibility of these writing and reading procedures.
Abstract: We present a design study for a nano-scale crossbar memory system that uses memristors with symmetrical but highly nonlinear current-voltage characteristics as memory elements. The memory is non-volatile since the memristors retain their state when un-powered. In order to address the nano-wires that make up this nano-scale crossbar, we use two coded demultiplexers implemented using mixed-scale crossbars (in which CMOS-wires cross nano-wires and in which the crosspoint junctions have one-time configurable memristors). This memory system does not utilize the kind of devices (diodes or transistors) that are normally used to isolate the memory cell being written to and read from in conventional memories. Instead, special techniques are introduced to perform the writing and the reading operation reliably by taking advantage of the nonlinearity of the type of memristors used. After discussing both writing and reading strategies for our memory system in general, we focus on a 64 x 64 memory array and present simulation results that show the feasibility of these writing and reading procedures. Besides simulating the case where all device parameters assume exactly their nominal value, we also simulate the much more realistic case where the device parameters stray around their nominal value: we observe a degradation in margins, but writing and reading is still feasible. These simulation results are based on a device model for memristors derived from measurements of fabricated devices in nano-scale crossbars using Pt and Ti nano-wires and using oxygen-depleted TiO(2) as the switching material.

253 citations

Patent
06 Nov 1991
TL;DR: In this article, an optical coherence-domain reflectometry system provides an interferometer driven by a broadband incoherent light source with the device under test connected to one arm of the interferometers and a movable scanning mirror in the other arm providing a reference signal.
Abstract: An optical coherence-domain reflectometry system provides an interferometer driven by a broadband incoherent light source with the device under test connected to one arm of the interferometer and a movable scanning mirror in the other arm providing a reference signal. The mirror moves at a controlled velocity to produce a Doppler shift in the reference signal frequency. The reference signal arm also includes a piezoelectric transducer which modulates the phase of the reference signal at a given frequency, causing a further shift in the reference signal frequency. The interference signal is detected and measured by a polarization diversity receiver. A linear polarizer in the reference signal arm is adjusted to produce equal reference signal powers in each arm of the polarization diversity receiver in the absence of a reflection signal from the test arm. The measured reflectometry signal is substantially independent of the state of polarization of the reflected signal from the device under test.

252 citations


Authors

Showing all 34676 results

NameH-indexPapersCitations
Andrew White1491494113874
Stephen R. Forrest1481041111816
Rafi Ahmed14663393190
Leonidas J. Guibas12469179200
Chenming Hu119129657264
Robert E. Tarjan11440067305
Hong-Jiang Zhang11246149068
Ching-Ping Wong106112842835
Guillermo Sapiro10466770128
James R. Heath10342558548
Arun Majumdar10245952464
Luca Benini101145347862
R. Stanley Williams10060546448
David M. Blei98378111547
Wei-Ying Ma9746440914
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202223
2021240
20201,028
20191,269
2018964