Institution
Hewlett-Packard
Company•Palo Alto, California, United States•
About: Hewlett-Packard is a company organization based out in Palo Alto, California, United States. It is known for research contribution in the topics: Signal & Layer (electronics). The organization has 34663 authors who have published 59808 publications receiving 1467218 citations. The organization is also known as: Hewlett Packard & Hewlett-Packard Company.
Papers published on a yearly basis
Papers
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19 Feb 2002TL;DR: In this paper, the authors present a system and method for facilitating financial transactions including a device configured to interface with a multi-use card, using information from a multiuser card to access a database that includes account information for accounts at multiple financial institutions, presenting the associated account information to a user, accepting a selection from the user of a selected account and posting the charges onto the selected account.
Abstract: The present invention includes a system and method for facilitating financial transactions including a device configured to interface with a multi-use card, using information from a multi-use card to access a database that includes account information for accounts at multiple financial institutions, presenting the associated account information to a user, accepting a selection from the user of a selected account and posting the charges onto the selected account.
205 citations
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TL;DR: An extension of these vector active contours is presented, proposing a possible image flow for vector-valued image segmentation, and shows the relation between active contour and a number of partial-differential-equations-based image processing algorithms as anisotropic diffusion and shock filters.
Abstract: A framework for object segmentation in vector-valued images is presented in this paper. The first scheme proposed is based on geometric active contours moving toward the objects to be detected in the vector-valued image. Object boundaries are obtained as geodesics or minimal weighted-distance curves, where the metric is given by a definition of edges in vector-valued data. The curve flow corresponding to the proposed active contours holds formal existence, uniqueness, stability, and correctness results. The scheme automatically handles changes in the deforming curve topology. The technique is applicable, for example, to color and texture images as well as multiscale representations. We then present an extension of these vector active contours, proposing a possible image flow for vector-valued image segmentation. The algorithm is based on moving each one of the image level sets according to the proposed vector active contours. This extension also shows the relation between active contours and a number of partial-differential-equations-based image processing algorithms as anisotropic diffusion and shock filters.
205 citations
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TL;DR: Tapping into the structured metadata in snippets of information gives communities of interest effective access to their collective knowledge.
Abstract: Tapping into the structured metadata in snippets of information gives communities of interest effective access to their collective knowledge.
205 citations
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10 Mar 1994TL;DR: In this article, the authors describe a capping mechanism for an ink pen that can protect against damage caused by the ingress of dirt and debris, the accumulation or solidification of ink, the discharge of static electricity or the like.
Abstract: An ink pen is provided with a protective capping apparatus to protect against damage caused by the ingress of dirt and debris, the accumulation or solidification of ink, the discharge of static electricity or the like. The protective capping apparatus has a protective cap movable between an open position and a closed position. In the closed position the protective cap shields a portion of an ink pen such as the ink-jets or the electrical contacts.
204 citations
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TL;DR: In this paper, the role of threading dislocations (TDs) in the physical properties of GaN and its alloys has been reviewed and a growing body of work provides compelling evidence that TDs in the group-III nitrides behave as non-radiative recombination centers, have energy levels in the otherwise forbidden energy gap, act as charged scattering centers in doped materials, and provide a leakage current pathway.
Abstract: In this paper, we review progress on understanding the role of threading dislocations (TDs) in the physical properties of GaN and its alloys. A growing body of work provides compelling evidence that TDs in the group-III nitrides behave as non-radiative recombination centers, have energy levels in the otherwise forbidden energy gap, act as charged scattering centers in doped materials, and provide a leakage current pathway. In comparison with conventional III–V semiconductors, the relatively small minority carrier diffusion length Ld (∼50 nm) in the III-nitrides, combined with favorable TD geometries, minimize dislocation-related degradation. The small value of Ld also allows for appreciable optical emission in materials with TD densities as high as 1010 cm−2.
204 citations
Authors
Showing all 34676 results
Name | H-index | Papers | Citations |
---|---|---|---|
Andrew White | 149 | 1494 | 113874 |
Stephen R. Forrest | 148 | 1041 | 111816 |
Rafi Ahmed | 146 | 633 | 93190 |
Leonidas J. Guibas | 124 | 691 | 79200 |
Chenming Hu | 119 | 1296 | 57264 |
Robert E. Tarjan | 114 | 400 | 67305 |
Hong-Jiang Zhang | 112 | 461 | 49068 |
Ching-Ping Wong | 106 | 1128 | 42835 |
Guillermo Sapiro | 104 | 667 | 70128 |
James R. Heath | 103 | 425 | 58548 |
Arun Majumdar | 102 | 459 | 52464 |
Luca Benini | 101 | 1453 | 47862 |
R. Stanley Williams | 100 | 605 | 46448 |
David M. Blei | 98 | 378 | 111547 |
Wei-Ying Ma | 97 | 464 | 40914 |