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Institution

Hewlett-Packard

CompanyPalo Alto, California, United States
About: Hewlett-Packard is a company organization based out in Palo Alto, California, United States. It is known for research contribution in the topics: Signal & Substrate (printing). The organization has 34663 authors who have published 59808 publications receiving 1467218 citations. The organization is also known as: Hewlett Packard & Hewlett-Packard Company.


Papers
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Journal ArticleDOI
TL;DR: The limiting low and high temperature resistivities place a limit on the maximum possible magnetoresistance of these materials and may explain why the "colossal" magnetores resistance reported in the literature correlates with the suppression of ${T}_{C}$.
Abstract: An investigation designed to display the intrinsic properties of perovskite manganites was accomplished by comparing the behavior of bulk samples with that of thin films. Epitaxial 1500 \AA{} films of perovskite ${\mathrm{La}}_{0.67}$${\mathrm{Ca}}_{0.33}$Mn${\mathrm{O}}_{3}$ and ${\mathrm{La}}_{0.67}$${\mathrm{Sr}}_{0.33}$Mn${\mathrm{O}}_{3}$ were grown by solid source chemical vapor deposition on LaAl${\mathrm{O}}_{3}$ and post annealed in oxygen at 950 \ifmmode^\circ\else\textdegree\fi{}C. Crystals were prepared by laser heated pedestal growth. The magnetic and electrical transport properties of the polycrystalline pellets, crystals, and annealed films are essentially the same. Below $\frac{{T}_{C}}{2}$ the intrinsic magnetization decreases as ${T}^{2}$ (as can be expected for itinerant electron ferromagnets) while the intrinsic resistivity increases proportional to ${T}^{2}$. The constant and ${T}^{2}$ coefficients of the resistivity are largely independent of magnetic field and alkaline earth element (Ca, Sr, or Ba). Hall effect measurements indicate that holes are mobile carriers in the metallic state. We identify three distinct types of negative magnetoresistance. The largest effect, observed near the Curie temperature, is 25% for the Sr and 250% [$\frac{\ensuremath{\Delta}R}{R(H)}$] for the Ca compound. There is also magnetoresistance associated with the net magnetization of polycrystalline samples which is not seen in films. Finally a small magnetoresistance linear in $H$ is observed even at low temperatures. The high temperature (above ${T}_{C}$) resistivity of ${\mathrm{La}}_{0.67}$${\mathrm{Ca}}_{0.33}$Mn${\mathrm{O}}_{3}$ is consistent with small polaron hopping conductivity with a slight transition at 750 K, while ${\mathrm{La}}_{0.67}$${\mathrm{Sr}}_{0.33}$Mn${\mathrm{O}}_{3}$ does not exhibit activated conductivity until about 500 K, well above ${T}_{C}$. The limiting low and high temperature resistivities place a limit on the maximum possible magnetoresistance of these materials and may explain why the "colossal" magnetoresistance reported in the literature correlates with the suppression of ${T}_{C}$.

597 citations

Proceedings Article
01 Dec 2011
TL;DR: This work investigates the effectiveness of several unsupervised disaggregation methods on low frequency power measurements collected in real homes and indicates that a conditional factorial hidden semi-Markov model, which integrates additional features related to when and how appliances are used in the home and more accurately represents the power use of individual appliances, outperforms the other unsuper supervision methods.
Abstract: Fear of increasing prices and concern about climate change are motivating residential power conservation efforts. We investigate the effectiveness of several unsupervised disaggregation methods on low frequency power measurements collected in real homes. Specifically, we consider variants of the factorial hidden Markov model. Our results indicate that a conditional factorial hidden semi-Markov model, which integrates additional features related to when and how appliances are used in the home and more accurately represents the power use of individual appliances, outperforms the other unsupervised disaggregation methods. Our results show that unsupervised techniques can provide perappliance power usage information in a non-invasive manner, which is ideal for enabling power conservation efforts.

596 citations

Patent
28 Oct 2005
TL;DR: In this paper, a plurality of permissions associated with a cloud customer is created, and each of the permissions describes an action performed on an object, while the second set of permissions describe an action to be performed by one or more users.
Abstract: A cloud computing environment having a plurality of computing nodes is described. A plurality of permissions associated with a cloud customer is created. A first set of permissions from the plurality of permissions is associated with one or more objects. Each of the first set of permissions describes an action performed on an object. A second set of permissions from the plurality of permissions is associated with one or more users. Each of the second set of permissions describes an action to be performed by one or more users.

593 citations

Journal ArticleDOI
TL;DR: This work monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer memristor neural network and achieves competitive classification accuracy on a standard machine learning dataset.
Abstract: Memristors with tunable resistance states are emerging building blocks of artificial neural networks. However, in situ learning on a large-scale multiple-layer memristor network has yet to be demonstrated because of challenges in device property engineering and circuit integration. Here we monolithically integrate hafnium oxide-based memristors with a foundry-made transistor array into a multiple-layer neural network. We experimentally demonstrate in situ learning capability and achieve competitive classification accuracy on a standard machine learning dataset, which further confirms that the training algorithm allows the network to adapt to hardware imperfections. Our simulation using the experimental parameters suggests that a larger network would further increase the classification accuracy. The memristor neural network is a promising hardware platform for artificial intelligence with high speed-energy efficiency.

592 citations

Journal ArticleDOI
TL;DR: A watermarking scheme for ownership verification and authentication that requires a user key during both the insertion and the extraction procedures, and which can detect any modification made to the image and indicate the specific locations that have been modified.
Abstract: We describe a watermarking scheme for ownership verification and authentication. Depending on the desire of the user, the watermark can be either visible or invisible. The scheme can detect any modification made to the image and indicate the specific locations that have been modified. If the correct key is specified in the watermark extraction procedure, then an output image is returned showing a proper watermark, indicating the image is authentic and has not been changed since the insertion of the watermark. Any modification would be reflected in a corresponding error in the watermark. If the key is incorrect, or if the image was not watermarked, or if the watermarked image is cropped, the watermark extraction algorithm will return an image that resembles random noise. Since it requires a user key during both the insertion and the extraction procedures, it is not possible for an unauthorized user to insert a new watermark or alter the existing watermark so that the resulting image will pass the test. We present secret key and public key versions of the technique.

591 citations


Authors

Showing all 34676 results

NameH-indexPapersCitations
Andrew White1491494113874
Stephen R. Forrest1481041111816
Rafi Ahmed14663393190
Leonidas J. Guibas12469179200
Chenming Hu119129657264
Robert E. Tarjan11440067305
Hong-Jiang Zhang11246149068
Ching-Ping Wong106112842835
Guillermo Sapiro10466770128
James R. Heath10342558548
Arun Majumdar10245952464
Luca Benini101145347862
R. Stanley Williams10060546448
David M. Blei98378111547
Wei-Ying Ma9746440914
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20231
202223
2021240
20201,028
20191,269
2018964