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Institution

Hokkaido University

EducationSapporo, Hokkaidô, Japan
About: Hokkaido University is a education organization based out in Sapporo, Hokkaidô, Japan. It is known for research contribution in the topics: Population & Catalysis. The organization has 53925 authors who have published 115403 publications receiving 2651647 citations. The organization is also known as: Hokudai & Hokkaidō daigaku.
Topics: Population, Catalysis, Gene, Transplantation, Virus


Papers
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Journal ArticleDOI
TL;DR: Two experiments explored differences in depersonalized trust (trust toward a relatively unknown target person) across cultures, finding that Americans trusted ingroup members more than outgroups members; however, the existence of a potential indirect relationship link increased trust for outgroup members more for Japanese than for Americans.
Abstract: Two experiments explored differences in depersonalized trust (trust toward a relatively unknown target person) across cultures. Based on a recent theoretical framework that postulates predominantly different bases for group behaviors in Western cultures versus Eastern cultures, it was predicted that Americans would tend to trust people primarily based on whether they shared category memberships; however, trust for Japanese was expected to be based on the likelihood of sharing direct or indirect interpersonal links. Results supported these predictions. In both Study 1 (questionnaire study) and Study 2 (online money allocation game), Americans trusted ingroup members more than outgroup members; however, the existence of a potential indirect relationship link increased trust for outgroup members more for Japanese than for Americans. Implications for understanding group processes across cultures are discussed.

347 citations

Journal ArticleDOI
TL;DR: Diabetes leads to an impairment of the endothelium-dependent relaxation of aorta, and the relaxation induced by sodium nitroprusside in diabetic preparations was comparable to the control.

347 citations

Journal ArticleDOI
TL;DR: To integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature is achieved.
Abstract: We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.

347 citations

Journal ArticleDOI
TL;DR: In vivo findings of a angiogenesis and migration of neutrophils may be due to persistent release of IL-8 from fibroblasts, supporting the notion that cell proliferation is accelerated indirectly by chitin and its derivatives when these materials are used in vivo.

346 citations

Journal ArticleDOI
TL;DR: A low-power CMOS voltage reference was developed using a 0.35 mum standard CMOS process technology and would be suitable for use in subthreshold-operated, power-aware LSIs.
Abstract: A low-power CMOS voltage reference was developed using a 0.35 mum standard CMOS process technology. The device consists of MOSFET circuits operated in the subthreshold region and uses no resistors. It generates two voltages having opposite temperature coefficients and adds them to produce an output voltage with a near-zero temperature coefficient. The resulting voltage is equal to the extrapolated threshold voltage of a MOSFET at absolute zero temperature, which was about 745 mV for the MOSFETs we used. The temperature coefficient of the voltage was 7 ppm/degC at best and 15 ppm/degC on average, in a range from - 20 to 80degC. The line sensitivity was 20 ppm/V in a supply voltage range of 1.4-3 V, and the power supply rejection ratio (PSRR) was -45 dB at 100 Hz. The power dissipation was 0.3 muW at 80degC. The chip area was 0.05 mm2 . Our device would be suitable for use in subthreshold-operated, power-aware LSIs.

346 citations


Authors

Showing all 54156 results

NameH-indexPapersCitations
Shizuo Akira2611308320561
Yi Cui2201015199725
John F. Hartwig14571466472
Yoshihiro Kawaoka13988375087
David Y. Graham138104780886
Takashi Kadowaki13787389729
Kazunari Domen13090877964
Susumu Kitagawa12580969594
Toshikazu Nakamura12173251374
Toshio Hirano12040155721
Li-Jun Wan11363952128
Wenbin Lin11347456786
Xiaoming Li113193272445
Jinhua Ye11265849496
Terence Tao11160694316
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
2023127
2022427
20214,743
20204,805
20194,363
20184,112