Hong Kong Polytechnic University

About: Hong Kong Polytechnic University is a education organization based out in Hong Kong, China. It is known for research contribution in the topics: Computer science & Tourism. The organization has 29633 authors who have published 72136 publications receiving 1956312 citations. The organization is also known as: HKPU & PolyU.

Deep Plug-And-Play Super-Resolution for Arbitrary Blur Kernels

Abstract: While deep neural networks (DNN) based single image super-resolution (SISR) methods are rapidly gaining popularity, they are mainly designed for the widely-used bicubic degradation, and there still remains the fundamental challenge for them to super-resolve low-resolution (LR) image with arbitrary blur kernels. In the meanwhile, plug-and-play image restoration has been recognized with high flexibility due to its modular structure for easy plug-in of denoiser priors. In this paper, we propose a principled formulation and framework by extending bicubic degradation based deep SISR with the help of plug-and-play framework to handle LR images with arbitrary blur kernels. Specifically, we design a new SISR degradation model so as to take advantage of existing blind deblurring methods for blur kernel estimation. To optimize the new degradation induced energy function, we then derive a plug-and-play algorithm via variable splitting technique, which allows us to plug any super-resolver prior rather than the denoiser prior as a modular part. Quantitative and qualitative evaluations on synthetic and real LR images demonstrate that the proposed deep plug-and-play super-resolution framework is flexible and effective to deal with blurry LR images.

Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply

Abstract: Single-crystal graphene can be grown on a copper foil at a rate of 60 μm s-1 by using an adjacent oxide substrate that continuously supplies oxygen to the surface of the copper catalyst. Graphene has a range of unique physical properties1,2 and could be of use in the development of a variety of electronic, photonic and photovoltaic devices3,4,5. For most applications, large-area high-quality graphene films are required and chemical vapour deposition (CVD) synthesis of graphene on copper surfaces has been of particular interest due to its simplicity and cost effectiveness6,7,8,9,10,11,12,13,14,15. However, the rates of growth for graphene by CVD on copper are less than 0.4 μm s–1, and therefore the synthesis of large, single-crystal graphene domains takes at least a few hours. Here, we show that single-crystal graphene can be grown on copper foils with a growth rate of 60 μm s–1. Our high growth rate is achieved by placing the copper foil above an oxide substrate with a gap of ∼15 μm between them. The oxide substrate provides a continuous supply of oxygen to the surface of the copper catalyst during the CVD growth, which significantly lowers the energy barrier to the decomposition of the carbon feedstock and increases the growth rate. With this approach, we are able to grow single-crystal graphene domains with a lateral size of 0.3 mm in just 5 s.