Institution
Indian Institute of Technology Bombay
Education•Mumbai, India•
About: Indian Institute of Technology Bombay is a education organization based out in Mumbai, India. It is known for research contribution in the topics: Population & Thin film. The organization has 16756 authors who have published 33588 publications receiving 570559 citations.
Papers published on a yearly basis
Papers
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18 Mar 2013
TL;DR: A polynomial time algorithm is proposed for optimal core selection, thread mapping and frequency assignment for a large class of multi-threaded applications that exploit the inherent variations in process parameters that exist in scaled technologies to offer increased performance.
Abstract: It is projected that increasing on-chip integration with technology scaling will lead to the so-called dark silicon era in which more transistors are available on a chip than can be simultaneously powered on. It is conventionally assumed that the dark silicon will be provisioned with heterogeneous resources, for example dedicated hardware accelerators. In this paper we challenge the conventional assumption and build a case for homogeneous dark silicon CMPs that exploit the inherent variations in process parameters that exist in scaled technologies to offer increased performance. Since process variations result in core-to-core variations in power and frequency, the idea is to cherry pick the best subset of cores for an application so as to maximize performance within the power budget. To this end, we propose a polynomial time algorithm for optimal core selection, thread mapping and frequency assignment for a large class of multi-threaded applications. Our experimental results based on the Sniper multi-core simulator show that up to 22% and 30% performance improvement is observed for homogeneous CMPs with 33% and 50% dark silicon, respectively.
112 citations
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TL;DR: This study showed that the traditional equation-based methods of predicting design scour downstream of a ski-jump bucket could better be replaced by one of the soft computing schemes.
112 citations
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TL;DR: This comprehensive study has investigated the ortho-hydroxylation of aromatic compounds by an iron complex using hybrid density functional theory incorporating dispersion effects and suggests that the Fe(IV)═O species has a substantial barrier height for this reaction, as the substrate is coordinated to the metal atoms.
Abstract: ortho-Hydroxylation of aromatic compounds by non-heme Fe complexes has been extensively studied in recent years by several research groups. The nature of the proposed oxidant varies from FeIII–OOH to high-valent FeIV═O and FeV═O species, and no definitive consensus has emerged. In this comprehensive study, we have investigated the ortho-hydroxylation of aromatic compounds by an iron complex using hybrid density functional theory incorporating dispersion effects. Three different oxidants, FeIII–OOH, FeIV═O, and FeV═O, and two different pathways, H-abstraction and electrophilic attack, have been considered to test the oxidative ability of different oxidants and to underpin the exact mechanism of this regiospecific reaction. By mapping the potential energy surface of each oxidant, our calculations categorize FeIII–OOH as a sluggish oxidant, as both proximal and distal oxygen atoms of this species have prohibitively high barriers to carry out the aromatic hydroxylation. This is in agreement to the experimenta...
112 citations
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TL;DR: In this paper, the quality of MOSFET gate stacks where high-k materials are implemented as gate dielectrics is investigated, and both drain-and gate-current noises are evaluated in order to obtain information about the defect content of the gate stack.
Abstract: In this paper, we investigate the quality of MOSFET gate stacks where high-k materials are implemented as gate dielectrics. We evaluate both drain- and gate-current noises in order to obtain information about the defect content of the gate stack. We analyze how the overall quality of the gate stack depends on the kind of high-k material, on the interfacial layer thickness, on the kind of gate electrode material, on the strain engineering, and on the substrate type. This comprehensive study allows us to understand which issues need to be addressed in order to achieve improved quality of the gate stack from a 1/f noise point of view.
112 citations
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TL;DR: In this paper, a variety of host-fabric elements (HE) cut by crosscutting elements (CE) in rocks defines flanking structures (FS) on mesoscopic and microscopic scales.
Abstract: A variety of host-fabric elements (HE) cut by cross-cutting elements (CE) in rocks defines flanking structures (FS) on mesoscopic and microscopic scales. There has been renewed interest in studying and classifying the FS for their morphologies, useful as shear sense indicators and geneses. Existing non-genetic morphologic parameters for the FS are reviewed, and two new classification schemes are presented. One of these is based on the nature of the CE and whether HE penetrates it. The other scheme takes account of all the potential combinations of drag/no drag and slip/no slip of the HE. Deciphering the shear sense of the rock body from FS is complicated because the angular relationship between the CE and the primary shear planes might be opposite to what is found between S- and C- ductile shear fabrics. Further, single CEs can curve and several similar FS occur in reverse forms. As with mineral fish, the shape asymmetries of microscopic CEs indicate the shear sense. Conjugate FS (with non-parallel CEs) with interfering perturbation fields around the CEs are more reliable shear-sense indicators than FS with single CE. During low but increasing bulk strains, FS may evolve from one type to another, e.g. from a- to s-type. At high strain, FS can resemble intrafolial or sheath fold. Whether the drag is normal or reverse depends fundamentally on the initial angle between the HE and the CE and the relative magnitudes of throw and vertical separation.
112 citations
Authors
Showing all 17055 results
Name | H-index | Papers | Citations |
---|---|---|---|
Jovan Milosevic | 152 | 1433 | 106802 |
C. N. R. Rao | 133 | 1646 | 86718 |
Robert R. Edelman | 119 | 605 | 49475 |
Claude Andre Pruneau | 114 | 610 | 45500 |
Sanjeev Kumar | 113 | 1325 | 54386 |
Basanta Kumar Nandi | 112 | 572 | 43331 |
Shaji Kumar | 111 | 1265 | 53237 |
Josep M. Guerrero | 110 | 1197 | 60890 |
R. Varma | 109 | 497 | 41970 |
Vijay P. Singh | 106 | 1699 | 55831 |
Vinayak P. Dravid | 103 | 817 | 43612 |
Swagata Mukherjee | 101 | 1048 | 46234 |
Anil Kumar | 99 | 2124 | 64825 |
Dhiman Chakraborty | 96 | 529 | 44459 |
Michael D. Ward | 95 | 823 | 36892 |