Indian Institute of Technology Indore

About: Indian Institute of Technology Indore is a education organization based out in Indore, Madhya Pradesh, India. It is known for research contribution in the topics: Computer science & Chemistry. The organization has 1606 authors who have published 4803 publications receiving 66500 citations.

Inhibition-induced explosive synchronization in multiplex networks.

Abstract: To date, explosive synchronization (ES) in a network is shown to be originated from considering either degree-frequency correlation, frequency-coupling strength correlation, inertia, or adaptively controlled phase oscillators. Here we show that ES is a generic phenomenon and can occur in any network by multiplexing it with an appropriate layer without even considering any prerequisite for the emergence of ES. We devise a technique which leads to the occurrence of ES with hysteresis loop in a network upon its multiplexing with a negatively coupled (or inhibitory) layer. The impact of various structural properties of positively coupled (or excitatory) and inhibitory layers along with the strength of multiplexing in gaining control over the induced ES transition is discussed. Analytical prediction for the spread of phase distribution of each layer is provided, which is in good agreement with the numerical assessment. This investigation is a step forward in highlighting the importance of multiplex framework not only in bringing phenomena which are not possible in an isolated network but also in providing more structural control over the induced phenomena.

Stereoselective Synthesis of 3,3-Disubstituted Oxindoles and Spirooxindoles via Allylic Alkylation of Morita-Baylis-Hillman Carbonates of Isatins with Cyclic Sulfamidate Imines Catalyzed by DABCO.

Abstract: An efficient, organocatalytic, and ecofriendly method has been developed for the quick construction of a wide array of 3,3-disubstituted oxindoles in good to excellent yields and diastereomeric ratio (up to ≤96:4) with excellent functional group tolerance via an allylic alkylation reaction of cyclic sulfamidate imines with a number of MBH carbonates of isatins in 2-MeTHF as an environmentally benign solvent at room temperature using 5 mol % of DABCO Furthermore, a metal-free-based one-shot synthesis of a medicinally promising polycyclic spirooxindole with an all-carbon spirocenter has been achieved with outstanding dr value (up to ≤99:1)

Revisiting the doping requirement for low power junctionless MOSFETs

Abstract: In this work, we revisit the requirement of higher channel doping (≥1019 cm−3) in junctionless (JL) double gate MOSFETs. It is demonstrated that moderately doped (1018 cm−3) ultra low power (ULP) JL transistors perform significantly better than heavily doped (1019 cm−3) devices. JL MOSFETs with moderate doping results in the spreading out of carriers across the entire silicon film instead of being localized at the center of the film. This improves gate controllability leading to higher on–off current ratio and lower intrinsic delay for ULP subthreshold logic applications. Additional benefits of using a channel doping concentration of 1018 cm−3 instead of conventional heavily doped design is the significant reduction in threshold voltage sensitivity values (by ~70–90%) with respect to film thickness and gate oxide thickness. Further improvement in ULP performance metrics can be achieved by limiting the source/drain implantation away from the gate edge. This design, specifically for ULP, allows the requirement of gate workfunction to be reduced from p+-poly (~ 5.1 eV) to near about midgap values (~ 4.8 eV). On–off current ratio and intrinsic delay for optimized JL devices are compared for low standby power projections of the technological roadmap. A 6T-SRAM cell operating at 0.8 V with 25 nm JL devices exhibits a static noise margin of 151 mV with gate workfunction offset of 0.2 eV with respect to midgap value (4.72 eV). The results highlight new viewpoints for realizing improved low power JL transistors.