Indian Institute of Technology Indore

About: Indian Institute of Technology Indore is a education organization based out in Indore, Madhya Pradesh, India. It is known for research contribution in the topics: Computer science & Chemistry. The organization has 1606 authors who have published 4803 publications receiving 66500 citations.

Study of Porous Silicon Prepared Using Metal-Induced Etching (MIE): a Comparison with Laser-Induced Etching (LIE)

Abstract: Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prior to the porosification step. Whereas in p-Si, prepared by LIE technique, wider pores with some variation in pore size as compared to MIE technique is observed because a laser having gaussian profile of intensity is used for porosification. Uniformly distribute well-aligned Si nanowires are observed in samples prepared by MIE method as seen using cross-sectional SEM imaging. A single photoluminescence (PL) peak at 1.96 eV corresponding to red emission at room temperature is observed which reveals that the Si nanowires, present in p-Si prepared by MIE, show quantum confinement effect. The single PL peak confirms the presence of uniform sized nanowires in MIE samples. These vertically aligned Si nanowires can be used for field emission application.

On a generalization of close-to-convex functions

Abstract: A motivation comes from {\em M. Ismail and et al.: A generalization of starlike functions, Complex Variables Theory Appl., 14 (1990), 77--84} to study a generalization of close-to-convex functions by means of a $q$-analog of a difference operator acting on analytic functions in the unit disk $\mathbb{D}=\{z\in \mathbb{C}:\,|z|<1\}$. We use the terminology {\em $q$-close-to-convex functions} for the $q$-analog of close-to-convex functions. The $q$-theory has wide applications in special functions and quantum physics which makes the study interesting and pertinent in this field. In this paper, we obtain some interesting results concerning conditions on the coefficients of power series of functions analytic in the unit disk which ensure that they generate functions in the $q$-close-to-convex family. As a result we find certain dilogarithm functions that are contained in this family. Secondly, we also study the famous Bieberbach conjecture problem on coefficients of analytic $q$-close-to-convex functions. This produces several power series of analytic functions convergent to basic hypergeometric functions.

Charged kaon femtoscopic correlations in pp collisions at √s=7 TeV

Abstract: Correlations of two charged identical kaons (KchKch) are measured in pp collisions at root s = 7 TeV by the ALICE experiment at the Large Hadron Collider (LHC). One-dimensional (KKch)-K-ch correlation functions are constructed in three multiplicity and four transverse momentum ranges. The (KKch)-K-ch femtoscopic source parameters R and lambda are extracted. The (KKch)-K-ch correlations show a slight increase of femtoscopic radii with increasing multiplicity and a slight decrease of radii with increasing transverse momentum. These trends are similar to the ones observed for pi pi and K-s(0) K-s(0) correlations in pp and heavy-ion collisions. However at high multiplicities, there is an indication that the one-dimensional correlation radii for charged kaons are larger than those for pions in contrast to what was observed in heavy-ion collisions at the Relativistic Heavy-Ion Collider. DOI:10.1103/PhysRevD.87.052016

On-Chip Adaptive Body Bias for Reducing the Impact of NBTI on 6T SRAM Cells

Abstract: Negative bias temperature instability (NBTI) is a major reliability issue with the scaled devices at elevated temperature. The effect of NBTI increases with the time, and it increases the threshold voltage of pMOS. In this paper, an on-chip adaptive body bias (O-ABB) circuit to compensate the degradation due to NBTI aging is presented. The O-ABB is used to compensate the parameter variations and improves the SRAM circuit yield regarding read current, hold SNM, read SNM, write margin, and word line write margin (WLWM). The O-ABB consists of standby leakage current ( ${I}_{{ddq}}$ ) sensor circuit, decision circuit, and body bias control circuit. Circuit level simulation for SRAM cell is performed for pre- and post-stress of ten years NBTI aging. The proposed O-ABB reduces the effect of NBTI on the stability of SRAM cell. The simulation results show the hold SNM, read SNM, and WLWM decreases by 10.55%, 8.55%, and 3.25%, respectively, in the absence of O-ABB, whereas hold SNM, read SNM, and WLWM decreases by only 0.47%, 1.15%, and 0.62%, respectively, if O-ABB is used to compensate the degradation.