Indian Institute of Technology Indore

About: Indian Institute of Technology Indore is a education organization based out in Indore, Madhya Pradesh, India. It is known for research contribution in the topics: Fading & Support vector machine. The organization has 1606 authors who have published 4803 publications receiving 66500 citations.

A fascinating multitasking Cu-MOF/rGO hybrid for high performance supercapacitors and highly sensitive and selective electrochemical nitrite sensors

Abstract: Herein, we report a multitasking Cu-MOF/rGO hybrid, fabricated by simple ultra-sonication of slow diffusion driven Cu-MOF crystals with chemically synthesized reduced graphene oxide (rGO). The molecular structure of the Cu-MOF was authenticated by single crystal X-ray studies. The prepared materials have been probed by various physicochemical characterization techniques. Due to the positive synergistic effects between Cu-MOF crystals and rGO nanosheets, the newly synthesized Cu-MOF/rGO hybrid delivers high charge storage efficiency (685.33 F g−1 at 1.6 A g−1), high energy (137.066 W h kg−1) and power density (4800.04 W kg−1) and excellent rate ability (retains 71.01% of its initial capacitance at 8 A g−1). Furthermore, the long cycle life (91.91% after 1000 cycles) of this hybrid indicates its high stability on the electrode surface. Additionally, the electrode modified with the Cu-MOF/rGO hybrid performs exceptionally towards the electrochemical detection of nitrite in a wide dynamic linear range of 3–40 000 μM (R2 = 0.99911), with a notable detection limit of 33 nm and a high sensitivity of 43.736 μA μM−1 cm−2. The versatility of the Cu-MOF/rGO modified electrode can be observed by distinguished selectivity in the presence of some common interfering species and also ability to detect nitrite in real samples.

Aptamers in the Therapeutics and Diagnostics Pipelines.

Abstract: Aptamers are short single-stranded DNA or RNA oligonucleotides that can selectively bind to small molecular ligands or protein targets with high affinity and specificity, by acquiring unique three-dimensional structures. Aptamers have the advantage of being highly specific, relatively small in size, non-immunogenic and can be easily stabilized by chemical modifications, thus allowing expansion of their diagnostic and therapeutic potential. Since the invention of aptamers in the early 1990s, great efforts have been made to make them clinically relevant for diseases like macular degeneration, cancer, thrombosis and inflammatory diseases. Furthermore, owing to the aforementioned advantages and unique adaptability of aptamers to point-of-care platforms, aptamer technology has created a stable niche in the field of in vitro diagnostics by enhancing the speed and accuracy of diagnoses. The aim of this review is to give an overview on aptamers, highlight the inherent therapeutic and diagnostic opportunities and challenges associated with them and present various aptamers that have reached therapeutic clinical trials, diagnostic markets or that have immediate translational potential for therapeutics and diagnostics applications.

Junctionless Multiple-Gate Transistors for Analog Applications

Abstract: This paper presents the evaluation of the analog properties of nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices of similar dimensions. The study has been performed for devices operating in saturation as single-transistor amplifiers, and we have considered the dependence of the analog properties on fin width Wfin and temperature T. Furthermore, this paper aims at providing a physical insight into the analog parameters of JL transistors. For that, in addition to device characterization, 3-D device simulations were performed. It is shown that, depending on gate voltage, JL devices can present both larger Early voltage VEA and larger intrinsic voltage gain AV than IM devices of similar dimensions. In addition, VEA and AV are always improved in JL devices when the temperature is increased, whereas they present a maximum value around room temperature for IM transistors.

J/psi Suppression at Forward Rapidity in Pb-Pb Collisions at root s(NN)=2.76 TeV

Abstract: The ALICE experiment has measured the inclusive J/psi production in Pb-Pb collisions at root s(NN) = 2.76 TeV down to zero transverse momentum in the rapidity range 2.5 < y < 4. A suppression of the inclusive J/psi yield in Pb-Pb is observed with respect to the one measured in pp collisions scaled by the number of binary nucleon-nucleon collisions. The nuclear modification factor, integrated over the 0%-80% most central collisions, is 0.545 +/- 0.032(stat) +/- 0.083dsyst_ and does not exhibit a significant dependence on the collision centrality. These features appear significantly different from measurements at lower collision energies. Models including J/psi production from charm quarks in a deconfined partonic phase can describe our data.